Control of Nucleation and Solidification Direction of Polycrystalline Silicon by Excimer Laser Irradiation
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概要
- 論文の詳細を見る
The nucleation site and solidification direction of polycrystalline silicon were controlled by excimer laser crystallization. The sidewall and the top of the amorphous silicon island, which includes a gradually narrowing region, were covered with a thick layer of polycrystalline silicon, and single-shot irradiation was performed from the back surface. The formation of only one nucleus was observed in a gradually narrowing region of width two times that of the lateral growth distance. Solidification from the nucleus toward a narrower width region was then effected in a region 2μm in width and 3μm in length. The growth mechanism is explained on the basis of the temperature gradient formed by the covering of the polycrystalline silicon and the gradually narrowing structure.
- 社団法人応用物理学会の論文
- 2000-01-15
著者
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Sasaki N
Fujitsu Lab. Ltd. Atsugi Jpn
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Sasaki Nobuo
Fujitsu Laboratories Limited
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HARA Akito
Fujitsu Laboratories Limited
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