Sasaki Nobuo | Fujitsu Laboratories Limited

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著作論文

Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Non-Alkali Glass Substrate Using Diode-Pumped Solid-State Continuous Wave Laser Lateral Crystallization
High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors on Non-alkaline Glass Produced Using Diode Pumped Solid State Continuous Wave Laser Lateral Crystallization
High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization : Semiconductors
Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation
Control of Nucleation and Solidification Direction of Polycrystalline Silicon by Excimer Laser Irradiation
Mo Contamination in p/p^+ Epitaxial Silicon Wafers
Selective Single-Crystalline-Silicon Growth on Non-Alkali Glass
High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors on Non-alkaline Glass Produced Using Diode Pumped Solid State Continuous Wave Laser Lateral Crystallization
Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation
Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Non-Alkali Glass Substrate Using Diode-Pumped Solid-State Continuous Wave Laser Lateral Crystallization

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