Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Non-Alkali Glass Substrate Using Diode-Pumped Solid-State Continuous Wave Laser Lateral Crystallization
スポンサーリンク
概要
- 論文の詳細を見る
Self-aligned top and bottom metal double-gate (SAMDG) low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) were fabricated on non-alkali glass at 550°C, using the diode-pumped solid-state continuous wave laser lateral crystallization (CLC) method. It was observed that the current drivability of SAMDG CLC poly-Si TFTs was eight or nine times larger than that of conventional top-gate excimer-laser-crystallized poly-Si TFTs, and the nominal field-effect mobility of the SAMDG CLC poly-Si TFT was larger than that of (100)-oriented single-crystal SIMOX-TFTs. In addition, a steep subthreshold value, 89 mV/dec, was observed for SAMDG CLC poly-Si TFTs. The exceptional high performance of SAMDG CLC poly-Si TFTs will allow the production of inexpensive LSI circuits on non-alkali glass substrates.
- Japan Society of Applied Physicsの論文
- 2004-06-15
著者
-
Sasaki Nobuo
Fujitsu Laboratories Limited
-
TAKEI Michiko
Fujitsu Laboratories Limited
-
YOSHINO Kenichi
Fujitsu Laboratories Limited
-
TAKEUCHI Fumiyo
Fujitsu Laboratories Limited
-
Hara Akito
Fujitsu Lab. Ltd.
-
Yoshino Kenichi
Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
関連論文
- Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Non-Alkali Glass Substrate Using Diode-Pumped Solid-State Continuous Wave Laser Lateral Crystallization
- High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors on Non-alkaline Glass Produced Using Diode Pumped Solid State Continuous Wave Laser Lateral Crystallization
- High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization : Semiconductors
- A New Approach for Form Polycrystalline Silicon by Excimer Laser Irradiation with a Wide Range of Energies
- Micro-Scale Characterization of Crystalline Phase and Stress in Laser-Crystallized Poly-Si Thin Films by Raman Spectroscopy
- Silicon-Hydrogen Bonds in Laser-Crystallized Polysilicon Thin Films and Their Effects on Electron Mobility
- Phase Variation of Amorphous-Si and Poly-Si Thin Films with Excimer Laser Irradiation
- Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation
- Influence of Grown-in Hydrogen on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon Crystals
- Control of Nucleation and Solidification Direction of Polycrystalline Silicon by Excimer Laser Irradiation
- Intrinsic Gettering of Iron Impurities in Silicon Wafers
- Mo Contamination in p/p^+ Epitaxial Silicon Wafers
- Effect of Implanted Oxygen and Nitrogen on Mobility and Generation of Dislocation in SiGe/Si Heterostructure
- Distribution of Fe in an Intrinsic Gettered Silicon Wafer after Annealing at Supersaturation Temperature
- Hydrogen-like Ultrashallow Thermal Donors in Silicon Crystals
- Selective Single-Crystalline-Silicon Growth on Non-Alkali Glass
- High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors on Non-alkaline Glass Produced Using Diode Pumped Solid State Continuous Wave Laser Lateral Crystallization
- Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation
- Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Non-Alkali Glass Substrate Using Diode-Pumped Solid-State Continuous Wave Laser Lateral Crystallization
- Electron Spin Resonance of Oxygen-Nitrogen Complex in Silicon
- Effects of Grown-in Hydrogen on Lifetime of Czochralski Silicon Crystals