Influence of Grown-in Hydrogen on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon Crystals
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概要
- 論文の詳細を見る
Using hydrogen-enhanced thermal donor formation and hydrogen-enhanced oxygen precipitate nuclei formation, we confirmed the presence of hydrogen in as-grown Czochralski (CZ) silicon (Si) ingots. Hydrogen concentrations in as-grown ingots were very low at 2.5×10^<11> cm^<-3>. We found that even such a small amount of hydrogen influences the quality of as-grown CZ Si crystals due to hydrogen-enhanced oxygen precipitate nuclei formation caused by in situ annealing during crystal growth. Reducing hydrogen contamination during crystal growth is important in obtaining high-quality CZ Si crystals.
- 社団法人応用物理学会の論文
- 1994-10-15
著者
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HARA Akito
Fujitsu Laboratories Limited
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Koizuka Masaaki
Fujitsu Limited
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AOKI Masaki
FUJITSU LABORATORIES LTD.
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MORI Haruhisa
Fujitsu Limited
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Fukuda Tetsuo
Fujitsu Ltd. Process Development Division
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YAMADA-KANETA Hiroshi
Fujitsu Limited
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Hara Akito
Fujitsu Lab. Ltd.
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