The Analysis of Slip Extension and Induced Stress in 300 mm Diameter Wafers on Three-point Symmetrical Support

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-03-15

著者

• Fukuda Tetsuo

  Fujitsu Ltd. Process Development Division

• HIKAZUTANI Ken-ichi

  Fujitsu Ltd., Process Development Division

• Hikazutani Ken-ichi

  Fujitsu Ltd. Process Development Division

関連論文

• Influence of Grown-in Hydrogen on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon Crystals
• The Analysis of Slip Extension and Induced Stress in 300 mm Diameter Wafers on Three-point Symmetrical Support
• Electron Spin Resonance of Oxygen-Nitrogen Complex in Silicon

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