Distribution of Fe in an Intrinsic Gettered Silicon Wafer after Annealing at Supersaturation Temperature
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We studied the distribution of Fe in thermal equilibrium after annealing at supersaturation temperature. Analyses by deep-level transient spectroscopy (DLTS) showed that the Fe concentrations in the denuded zone and in the bulk region of a Czochralski (CZ) intrinsic gettered wafer are the same when depletion of Fe from the denuded zone stops. This Fe concentration corresponds to the solid solubility of Fe in the wafer at the annealing temperature used. This result indicates that there is no difference in Fe solid solubility between the bulk region and the denuded zone of the wafer. Results of transmission electron microscopy (TEN)-energy dispersive X-ray (EDX) analyses suggest that supersaturated Fe in an intrinsic gettered wafer precipitates preferentially with oxygen precipitates in the bulk region, while supersaturated Fe in an as-grown wafer precipitates in the near-surface region.
- 1996-10-01
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