Intrinsic Gettering of Iron Impurities in Silicon Wafers
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概要
- 論文の詳細を見る
We present a new experimental approach to using intrinsic gettering to remove Fe impurities. We annealed samples, followed by quenching, and measured the Fe concentration near the surface using deep-level transient spectroscopy. The supersaturation of Fe impurities is necessary for the intrinsic gettering of Fe. However, for a higher supersaturation, Fe impurities precipitate faster than gettering. The optimum degree of supersaturation is one order of magnitude. Gettering is limited by the reaction of Fe with the oxygen precipitates in the defect region, rather than by Fe diffusion to the defect region.
- 社団法人応用物理学会の論文
- 1991-12-30
著者
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HARA Akito
Fujitsu Laboratories Limited
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AOKI Masaki
FUJITSU LABORATORIES LTD.
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Ohsawa A
Fujitsu Laboratories Ltd.
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Ohsawa Akira
Fujitsu Laboratories Ltd.
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Hara A
Fujitsu Laboratories Limited
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Hara Akito
Fujitsu Lab. Ltd.
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