SiCl_4^+(C^2T_2-X^2T_1, C^2T_2-A^2T_2) Emissions Produced from the He(2^3S), Ne(^3P_<2,0>)/SiCl_4 Penning Ionization and Ar^+(^2P_<3/2>)/SiCl_4 Charge-Transfer Reaction at Thermal Energy

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概要

• 論文の詳細を見る

• The bound-free SiCl_4+(C^2T_2-X^2T_1, C^2T_2-A^2T_2) emissions resulting from the He (2^3S), Ne (^3P_<2,0>)/SiCl_4 Penning ionization and Ar^+(^2P_<3/2>)/SiCl_4 charge-transfer reaction have been observed in the rare gas flowing afterglows. A comparison of the observed spectral features with those in a reported electron-impact spectrum suggested that SiCl_4^+(C) is formed through a vertical Franck-Condon type process in the He (2^3S), Ne (^3P_<0,2>)/SiCl_4 Penning ionization, while the Ar^+(^2P_<3/2>)/SiCl_4 charge-transfer reaction preferentially populates near-resonant highly vibrationally excited levels with small Franck-Condon factors for ionization.

• 九州大学の論文
• 1995-11-15

著者

• Nakamura M

  Institute Of Advanced Material Study And Department Of Molecular Science And Technology Graduate Sch

• Nakamura Masafumi

  Department of Surgery 1, Kyushu University

• 辻 正治

  九州大学先導物質化学研究所

• MIZUGUCHI Toshinori

  Present address

• KANEKO Nobuo

  Present address

• Nishimura Y

  Institute Of Advanced Material Study Kyushu University

• Nakamura Masafumi

  Department Of Cancer Therapy And Research Graduate School Of Medical Sciences Kyushu University

• Kaneko Nobuo

  Present Address: Sanken Electronic Co.

• Nakamura M

  Toshiba Corp. Yokohama Jpn

• Mizuguchi Toshinori

  Present Address: Nippon Steel Corp.

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