シリコン表面窒化用活性窒素フロー装置の開発

概要

論文の詳細を見る
A fast discharge-flow type active nitrogen source has been developed for the direct nitridation of a Si substrate. A low-power microwave discharge of He/N_2 mixtures was found to supply more active nitrogen than a discharge of Ar/N_2 mixtures. In order to determine the optimum nitridation conditions, the relative concentration of the metastable N(^2D) atoms was measured as a function of the microwave power, the He and N_2 flow rates, and the distance between the center of the microwave discharge and the nitridation zone, by observing NO(B^2II-X^2II) chemiluminescence resulting from the N(^2D)+N_2O reaction. The optimum conditions for the N(^2D) generation were foundto be a microwave power of 190W, He flow rates of 12,000-18,000 seem, a N_2 flow rate of 120 sccm, and a distance of 10cm between the center of microwave discharge and the nitridation zone.
九州大学の論文
2000-07-01