Downflow Etching of Si Using a Microwave-Excited Discharge Plasma of Ar/CF_4 Mixtures
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概要
- 論文の詳細を見る
Downflow etching of Si was studied using a microwave-excited discharge plasma of Ar/CF_4 mixtures under conditions that would produce less plasma-damage than that in our previous experiments [M. Tsuji et al., Jpn. J. Appl Phys., 38, 6470 (1999)]. A long distance between the center of discharge and the substrate (20cm) was used in order to reduce plasma-damage of the Si surface. The maximum etching rate was about 700Å/min at a microwave power of 80W, an Ar flow rate of 2500 sccm, and a CF_4 flow rate of 300 sccm. A thin C_mF_n polymer was deposited along the edges of etched region at high CF_4 flow rates above about 100 sccm. It was characterized using a XPS.
- 九州大学の論文
著者
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TANAKA Atsushi
Department of Quantum Science and Energy Engineering, Tohoku University
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辻 剛志
九大先導研・crest
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Tanoue T
Kyushu Univ. Fukuoka
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辻 正治
九州大学
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Tsuji Masaharu
Institute Of Advanced Material Study And Department Of Molecular Science And Technology Graduate Sch
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辻 正治
九州大学先導物質化学研究所
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Tsuji Masaharu
Crest Jst
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辻 剛志
九州大学 機能物質科学研究所
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Tsuji M
Matsushita Battery Industrial Co. Ltd. Osaka Jpn
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Okano Shinji
Department Of Applied Science For Electronics And Materials Graduate School Of Engineering Science
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Tanaka Atsushi
Department Of Cardiovascular Medicine Wakayama Medical University
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TANOUE Takeshi
Department of Apptied Science for Eiectronics and Materials, Graduate School of Engineering Sciences
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Tanaka A
Division Of Pediatrics Department Of Homeostatic Regulation And Development Niigata University Gradu
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Tanaka A
Department Of Applied Science For Electronics And Materials Graduate School Of Engineering Science
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Tanaka Atsushi
Department Of Cardiology Kariya Toyota General Hospital
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Tanoue Takeshi
Department of Applied Science for Electronics and Materials, Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan
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