Ar/CF4混合ガスの放電フロー中でのシリコンのケミカルドライエッチングーエッチャント生成に関与するAr活性種の同定ー

概要

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Chemical dry etching of Si by Ar/CF$_4$ gas mixtures has been studied using a discharge-flow apparatus. Active species of Ar generated by a microwave discharge of Ar/CF$_4$ mixtures are ${\rm Ar}({}^3{\rm P}_{0,2})$, ${\rm Ar}^+({}^2{\rm P}_{1/2,3/2})$, and metastable ${\rm Ar}^{+*}$ ions. The responsible Ar active species for the formation of F atoms were examined by measuring the dependence of their relative concentrations on the Ar flow rate. The dependence of etch rate on the Ar flow rate was similar to that of ${\rm Ar}({}^3{\rm P}_{0,2}$. It was therefore concluded that the metastable ${\rm Ar}({}^3{\rm P}_{0,2}$ atoms are most significant active species for the generation of F atoms.
九州大学の論文
2000-12-30