Anisotropic Polarization Properties of Photoluminescence from GaInAsP/InP Quantum-Wire Structures Fabricated by Two-Step Organometallic Vapor Phase Epitaxy Growth
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概要
- 論文の詳細を見る
The polarization dependence of 1.5μm wavelength GaInAsP/InP quantum-wire structures fabricated by electron beam lithography and two-step organometallic vapor phase epitaxy growth were measured and compared with quantum-film structures fabricated on the same wafer. As a result, clear anisotropic photoluminescence (PL) properties of the quantum-wire structure corresponding to the wire width (25 nm and 35 nm) were confirmed. This anisotropy was observed to be slightly stronger in the 1% compressively-strained quantum-wire structure than that in the lattice-matched one with the same wire width (35 nm).
- 社団法人応用物理学会の論文
- 1998-01-15
著者
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ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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KOJIMA Takashi
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Bacher G
Wuerzburg Univ. Wuerzburg Deu
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BACHER Gerd
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Kojima Takashi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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