Distributed Reflector Laser Integrated with Active and Passive Grating Sections Using Lateral Quantum Confinement Effect
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概要
- 論文の詳細を見る
A new type of distributed reflector (DR) laser, monolithically integrated with wirelike active section and passive distributed Bragg reflector (DBR) section, was realized for the first time by using the lateral quantum confinement effect in quantum-wire structure. As a result, a threshold current density as low as 320 A/cm2 and a strong asymmetric output ratio of the front to the rear facet of 28 were obtained for a 20 μm wide stripe structure. For lower threshold and single-mode operation, a narrow stripe DR laser was fabricated. Threshold current of 7.4 mA and submode suppression ratio (SMSR) of 40 dB at a bias current of 1.2 times the threshold were obtained for a stripe width of 3 μm under room-temperature continuous-wave (RT-CW) condition.
- Japan Society of Applied Physicsの論文
- 2003-08-01
著者
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Tamura Shigeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Ohira Kazuya
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Murayama Tomonori
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Yagi Hideki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Tamura Shigeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yagi Hideki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Ohira Kazuya
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Murayama Tomonori
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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