Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH4/H2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth
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概要
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GaInAsP/InP multiple-quantum-wire structures with wire widths of 18 nm and 27 nm in the period of 80 nm were fabricated by electron beam lithography, CH4/H2-reactive ion etching and organometallic vapor-phase-epitaxial regrowth. Size distributions of these quantum-wire structures were measured by scanning electron microscope and the standard deviation was obtained to be less than $\pm 2$ nm. From EL spectra at 103 K, the full-width at half maximum of these quantum-wire structures was found comparable to that of the quantum-film structure fabricated from the same initial wafer.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-06-15
著者
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HAQUE Anisul
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Tamura Shigeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Muranushi Kengo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Yagi Hideki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Sano Takuya
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Maruyama Takeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Haque Anisul
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Muranushi Kengo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Sano Takuya
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Maruyama Takeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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