Maruyama Takeo | Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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概要
関連著者
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Maruyama Takeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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HAQUE Anisul
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Yagi Hideki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Sano Takuya
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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MARUYAMA Takeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Tamura Shigeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Ohira Kazuya
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Yagi Hideki
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Arai S
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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YAGI Hideki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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SANO Takuya
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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OHIRA Kazuya
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Tanaka S
Superconducting Sensor Laboratory Itami Laboratory
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Yagi H
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Ohira Kazuya
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Yagi H
Konoshima Chemical Co. Ltd.
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Tanaka S
Tokyo Inst. Technol. Tokyo Jpn
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Murayama T
Integrated Research Institute Tokyo Institute Of Technology
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Yasumoto H
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Maruyama Takeo
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Haque A
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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TAMURA Shigeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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DHANORM Plumwongrot
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Tamura S
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Tanaka S
International Superconductivity Technol. Center Tokyo Jpn
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Tamura S
Sony Corp. Yokohama Jpn
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Dhanorm Plumwongrot
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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PLUMWONGROT Dhanorm
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Maruyama T
Tokyo Inst. Technol. Yokohama Jpn
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Maruyama T
Meijo Univ. Nagoya Jpn
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Maruyama T
Department Of Photonics Ritsumeikan University
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WATANABE Masahiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Muranushi Kengo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Maeda Y
Center For Microelectronic Systems Kyushu Institute Of Technology
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Matsunuma Takeshi
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Maeda Yasuhisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Maeda Yukio
Department Of Applied Physics Tokyo University Of Agriculture And Technology
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Watanabe Masahiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Haque Anisul
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Plumwongrot Dhanorm
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Muranushi Kengo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Sano Takuya
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Maruyama Takeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
著作論文
- GaInAsP/InP Long Wavelength Quantum-Wire Lasers
- [Invited]GaInAsP/InP Long Wavelength Quantum-Wire Lasers
- Room Temperature-Copntinuous Wave Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers by Dry Etching and Regrowth Method
- Electroluminescence of Nanocrystal Si Embedded in Single-Crystal CaF_2/Si(111)
- Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH4/H2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth
- GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes