Low Threshold Current Density Operation of GaInAsP/InP Lasers with Strain-Compensated Multiple-Layered Wirelike Active Regions
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-10-15
著者
-
Yagi Hideki
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
-
ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
YASUMOTO Hideo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
Yasumoto Hideo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
Arai S
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
-
TAMURA Shigeo
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
Tamura Shigeo
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
NUNOYA Nobuhiro
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
Yagi H
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
-
Yagi H
Konoshima Chemical Co. Ltd.
-
Arai Shigehisa
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
Tanaka S
International Superconductivity Technol. Center Tokyo Jpn
-
MIDORIKAWA Hideki
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
-
Nunoya Nobuhiro
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
Tamura S
Sony Corp. Yokohama Jpn
-
Yasumoto H
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
-
Nunoya N
Tokyo Inst. Technol. Tokyo Jpn
-
Midorikawa Hideki
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
関連論文
- HTS-rf-SQUIDを用いた低磁場NMRに関する研究
- ロボット式モバイルHTS-SQUID非破壊検査装置による水素燃料タンクの欠陥検出
- 移動する磁気微粒子検出のためのマルチチャンネルHTS-SQUIDシステムの開発
- 磁場耐性の高いHTS-SQUIDを用いたロボット式モバイル非破壊検査装置
- 超電導SQUID技術 (特集 超電導技術の最近の動向)
- High-Reflectivity Semiconductor/Benzocyclobutene Bragg Reflector Mirrors for GaInAsP/InP Lasers
- Highly Uniform 1.5 μm Wavelength Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Lasers
- Theoretical Analysis of GaInAsP/InP Multiple Micro-Cavity Laser
- Continuous Wave Operation of 1.55 μm GaInAsP/InP Laser with Semiconductor/Benzocyclobutene Distributed Bragg Reflector
- Multiple Micro-Cavity Laser with Benzocyclobutene/Semiconductor High Reflective Mirrors Fabricated by CH_4/H_2-Reactive Ion Etching
- GaInAsP/InP Multiple Short Cavity Laser with λ/4-Air Gap/Semiconductor Bragg Reflectors
- GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes
- GaInAsP/InP Long Wavelength Quantum-Wire Lasers
- [Invited]GaInAsP/InP Long Wavelength Quantum-Wire Lasers
- Room Temperature-Copntinuous Wave Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers by Dry Etching and Regrowth Method
- Characterization of Surface Conductive Diamond Layer Grown by Microwave Plasma Chemical Vapor Deposition
- Electrical Properties of Boron-Implanted Homoepitaxial Diamond Films
- Reliable Operation of GaInAsP/InP Distributed Feedback Laser with Wirelike Active Regions
- Distributed Reflector Lasers with First-Order Vertical Grating and Second-Order Bragg Reflectors
- GaInAsP/InP Distributed Reflector Lasers Consisting of Deeply Etched Vertical Gratings : Optics and Quantum Electronics
- 1.5-μm-Wavelength Distributed Feedback Lasers With Deeply Etched First-Order Vertical Grating : Optics and Quantum Electronics
- Deeply Etched Semiconductor/Benzocyclobutene Distributed Bragg Reflector Laser Combined with Multiple Cavities for 1.5-μm-Wavelength Single-Mode Operation
- Characterization of Homoepitaxial Diamond Films Grown from Carbon Monoxide
- Laser-Diode Pumped Self-Q-Switched Microchip Lasers
- Yb^:Y_2O_3 Ceramics : a Novel Solid-State Laser Material : Optics and Quantum Electronics
- Chromium Doped Y_3Al_5O_ Ceramics : a Novel Saturable Absorber for Passively Self-Q-Switched One-Micron Solid State Lasers
- Nd^:Y_2O_3 Ceramic Laser
- Highly Efficient Nd:Y_3Al_5O_ Ceramic Laser : Optics and Quantum Electronics
- Initial Stage of Bias-Enhanced Diamond Nucleation Induced by Microwave Plasma
- Elastic Recoil Detection Analysis for Hydrogen near the Surface of Chemical-Vapor-Deposited Diamond
- Laser Damage Threshold of Ceramic YAG
- Influence of the Grain Boundaries on the Heat Transfer in Laser Ceramics
- Side-Pumped Nd^:Y_3Al_5O_ Composite Ceramic Laser
- Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- Taper-Shape Dependence of Tapered-Waveguide Traveling Wave Semiconductor Laser Amplifier (TTW-SLA)
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk : High Density Recording
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk
- Low-Threshold Current Density GaInAsP/InP Quantum-Wire Distributed Feedback Lasers Fabricated by Low-Damage Processes
- High T0 operation of 1590nm GaInAsP/InP quantum-wire distributed feedback lasers by bragg wavelength detuning
- Distributed Reflector Laser Integrated with Active and Passive Grating Sections Using Lateral Quantum Confinement Effect
- Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH_4/H_2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth
- GaInAsP/InP Strain-Compensated Quantum-Wire Lasers Fabricated by CH_4/H_2 Dry Etching and Organometallic Vapor-Phase-Epitaxial RegroWth : Optics and Quantum Electronics
- Side-Pumped Nd〔3+〕:Y3Al5O12 Composite Ceramic Laser
- High-Power Nd : Y_3Al_5O_ Ceramic Laser
- Distributed Reflector Laser with Wirelike Active Regions for Asymmetric Output Property (Short Note)
- Low Threshold Current Density Operation of GaInAsP/InP Lasers with Strain-Compensated Multiple-Layered Wirelike Active Regions
- GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH_4/H_2 Reactive-Ion Etching
- Characterization of Etching Damage in Cl_2/H_2-Reactive-Ion-Etching of GaInAs/InP Heterostructure
- Low Threshold GaInAsP/InP Distributed Feedback Lasers with Periodic Wire Active Regions Fabricated by CH_4/H_2 Reactive Ion Etching
- Evaluation of Optical Gain Properties of GaInAsP/InP Compressively Strained Quantum-Wire Lasers
- GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH_4/H_2-Reactive-Ion-Etching
- Temperature Dependence of Internal Quantum Efficiency of 20-nm-Wide GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Sidewall Recombination Velocity in GaInAsP/InP Quantum-Well Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth
- Gain Spectrum Measurement of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers
- Fabrication of GaInAs/InP Quantum Wires by Organometallic-Vapor-Phase-Epitaxial (OMVPE) Selective Growth on Grooved Side Walls of Ultrafine Multilayers
- A New-Type 1.5 〜 1.6 μm GaInAsP/InP BIG-DBR Laser by an Island-Type Mesa Process
- Adaptive Decoding Algorithms for Low-Density Parity-Check Codes over the Binary Erasure Channel
- Fingerprinting Codes for Multimedia Data against Averaging Attack
- Density Evolution Analysis of Robustness for LDPC Codes over the Gilbert-Elliott Channel
- A Generalization of the Parallel Error Correcting Codes by Allowing Some Random Errors(Information Theory and Its Applications)
- On Correctable Burst-Erasure Lengths for LDPC Codes with Column Permuted Parity-Check Matrices
- Decoding Performance of Linear Parallel Error Correcting Codes
- Fast Algorithm for Generating Candidate Codewords in Reliability-Based Maximum Likelihood Decoding(Coding Theory,Information Theory and Its Applications)
- A Modification Method for Constructing Low-Density Parity-Check Codes for Burst Erasures(Coding Theory,Information Theory and Its Applications)
- A New Class of Traceability Codes for Digital Fingerprinting(HISC2006)
- A Heuristic Search Algorithm with the Reduced List of Test Error Patterns for Maximum Likelihood Decoding
- A Heuristic Search Method with the Reduced List of Test Error Patterns for Maximum Likelihood Decoding(Coding Theory, Information Theory and Its Applications)
- Fast Algorithm for Generating Candidate Codewords in Reliability-based Maximum Likelihood Decoding
- An Improved Method of Reliability-Based Maximum Likelihood Decoding Algorithms Using an Order Relation among Binary Vectors(Coding Theory)(Information Theory and Its Applications)
- A Method for Reducing Space Complexity of Reliability based Heuristic Search Maximum Likelihood Decoding Algorithms
- Complexity Reduction of the Gazelle and Snyders Decoding Algorithm for Maximum Likelihood Decoding(Coding Theory)(Information Theory and Its Applications)
- Observations of the Initial Stage of Chemical-Vapor-Deposited Diamond Growth Using Transmission Electron Microscopy
- Estimation of Sidewall Nonradiative Recombination in GaInAsP/InP Wire Structures Fabricated by Low Energy Electron-Cyclotron-Resonance Reactive-Ion-Beam-Etching
- Switching Operation of GaInAs/InP Multiple-Quantum-Well Directional-Coupler-Type All-Optical Switch
- Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching
- Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching
- Size Fluctuation of 50 nm Periodic GaInAsP/InP Wire Structure by Electron Beam Lithography and Wet Chemical Etching
- Proposal of Semiconductor Directional-Coupler-Type All-Optical Switch with Tapered-Waveguide Structures
- Epitaxial Growth of Metal(CoSi_2)/Insulator(CaF_2) Nanometer-Thick Layered Structure on Si(111)
- Low Temperature (〜420℃) Epitaxial Growth of CaF_2/Si(111) by Ionized-Cluster-Beam Technique
- GaInAsP/InP Compressively Strained Quantum-Wire Lasers Fabricated by Electron Beam Lithography and 2-Step Organometallic Vapor Phase Epitaxy
- Characterization of Abrasively Processed Surface of Si(100) Wafer
- Mechanism of Secondary Ion Emission from Silicon Dioxide Bombarded with Argon tons
- Photon Recycling Effect in Semiconductor Lasers using Low Dimensional Structures
- Study of Oxidation of TiSi_2 Thin Film by XPS
- Stripe Direction Dependence of Mesa Angle Formed on (100) InP by Selective Etching using HCl Solution
- Anisotropic Polarization Properties of Photoluminescence from GaInAsP/InP Quantum-Wire Structures Fabricated by Two-Step Organometallic Vapor Phase Epitaxy Growth
- A Method for Grouping Symbol Nodes of Group Shuffled BP Decoding Algorithm
- Single-Mode Operation of Optically Pumped Membrane Buried Heterostructure Distributed-Feedback Lasers : Optics and Quantum Electronics
- High-Reflectivity Semiconductor/Benzocyclobutene Bragg Reflector Mirrors for GaInAsP/InP Lasers
- Reliable Operation of GaInAsP/InP Distributed Feedback Laser with Wirelike Active Regions
- Polarization Anisotropy of Spontaneous Emission Spectra in GaInAsP/InP Quantum-Wire Structures
- High $T_{0}$ Operation of 1590 nm GaInAsP/InP Quantum-Wire Distributed Feedback Lasers by Bragg Wavelength Detuning
- Distributed Reflector Laser Integrated with Active and Passive Grating Sections Using Lateral Quantum Confinement Effect
- Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH4/H2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth
- GaInAsP/InP Partially Strain-Compensated Multiple-Quantum-Wire Lasers Fabricated by Dry Etching and Regrowth Processes
- GaInAsP/InP distributed reflector laser with phase-shifted DFB and quantum-wire DBR sections
- Photon Recycling Effect in Semiconductor Lasers using Low Dimensional Structures