Side-Pumped Nd〔3+〕:Y3Al5O12 Composite Ceramic Laser
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関連論文
- GaInAsP/InP Long Wavelength Quantum-Wire Lasers
- [Invited]GaInAsP/InP Long Wavelength Quantum-Wire Lasers
- Room Temperature-Copntinuous Wave Operation of GaInAsP/InP Multiple-Quantum-Wire Lasers by Dry Etching and Regrowth Method
- Characterization of Surface Conductive Diamond Layer Grown by Microwave Plasma Chemical Vapor Deposition
- Electrical Properties of Boron-Implanted Homoepitaxial Diamond Films
- Characterization of Homoepitaxial Diamond Films Grown from Carbon Monoxide
- Laser-Diode Pumped Self-Q-Switched Microchip Lasers
- Yb^:Y_2O_3 Ceramics : a Novel Solid-State Laser Material : Optics and Quantum Electronics
- Chromium Doped Y_3Al_5O_ Ceramics : a Novel Saturable Absorber for Passively Self-Q-Switched One-Micron Solid State Lasers
- Nd^:Y_2O_3 Ceramic Laser
- Highly Efficient Nd:Y_3Al_5O_ Ceramic Laser : Optics and Quantum Electronics
- Initial Stage of Bias-Enhanced Diamond Nucleation Induced by Microwave Plasma
- Elastic Recoil Detection Analysis for Hydrogen near the Surface of Chemical-Vapor-Deposited Diamond
- Laser Damage Threshold of Ceramic YAG
- Influence of the Grain Boundaries on the Heat Transfer in Laser Ceramics
- Side-Pumped Nd^:Y_3Al_5O_ Composite Ceramic Laser
- Low-Threshold Current Density GaInAsP/InP Quantum-Wire Distributed Feedback Lasers Fabricated by Low-Damage Processes
- Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH_4/H_2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth
- GaInAsP/InP Strain-Compensated Quantum-Wire Lasers Fabricated by CH_4/H_2 Dry Etching and Organometallic Vapor-Phase-Epitaxial RegroWth : Optics and Quantum Electronics
- Side-Pumped Nd〔3+〕:Y3Al5O12 Composite Ceramic Laser
- High-Power Nd : Y_3Al_5O_ Ceramic Laser
- Low Threshold Current Density Operation of GaInAsP/InP Lasers with Strain-Compensated Multiple-Layered Wirelike Active Regions
- GaInAsP/InP Multiple-Layered Quantum-Wire Lasers Fabricated by CH_4/H_2 Reactive-Ion Etching
- Low Threshold GaInAsP/InP Distributed Feedback Lasers with Periodic Wire Active Regions Fabricated by CH_4/H_2 Reactive Ion Etching
- Evaluation of Optical Gain Properties of GaInAsP/InP Compressively Strained Quantum-Wire Lasers
- Observations of the Initial Stage of Chemical-Vapor-Deposited Diamond Growth Using Transmission Electron Microscopy
- Characterization of Abrasively Processed Surface of Si(100) Wafer
- Mechanism of Secondary Ion Emission from Silicon Dioxide Bombarded with Argon tons
- Fusion of Paramecia by Means of Altered Electrofusion
- A New Rotation Phenomena of Cells Induced by Homegeneous Electric Field
- Orientation and Pearl-Chain Formation of Paramecia Induced by AC Electric Field
- Study of Oxidation of TiSi_2 Thin Film by XPS
- Ultrafast Transparent Ceramic Scintillators Using the Yb^ Charge Transfer Luminescence in RE_2O_3 Host