Low Temperature (〜420℃) Epitaxial Growth of CaF_2/Si(111) by Ionized-Cluster-Beam Technique
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-09-20
著者
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ARAI Shigehisa
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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Arai S
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Department Of Physical Electronics Tokyo Institute Of Technology
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Arai Shigehisa
Faculty Of Engineering Tokyo Institute Of Technology
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WATANABE Masahiro
Department of Information Processing, Tokyo Institute of Technology
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Asada Masahiro
Department of Neurosurgery, Chibune Hospital
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Asada Masahiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Arai Shigehisa
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Arai I
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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MUGURUMA Hitoshi
Department of Electronic Engineering, Shibaura Institute of Technology
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Muguruma Hitoshi
Department Of Electrical And Electronics Engineering Tokyo Institute Of Technology
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Watanabe Masahiro
Department Of Anatomy Hokkaido University School Of Medicine
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Watanabe Masahiro
Department Of Agricultural Chemistry Faculty Of Agriculture The University Of Tokyo
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ARAI Shigehisa
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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