Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal Gate
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-11-15
著者
-
Asada Masahiro
Department of Neurosurgery, Chibune Hospital
-
Itoh Atsushi
Department of Arrhythmia and Electrophysiology, Shizuoka Saiseikai General Hospital
-
Itoh Atsushi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Asada Masahiro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Saito W
Tokyo Inst. Technol. Tokyo Jpn
-
Saito Wataru
Institute Of Agriculture And Forestry University Of Tsukuba
-
SAITOH Wataru
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
Itoh A
Ricoh Co. Ltd. Miyagi Jpn
-
YAMAGAMI Shigeharu
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
-
Saitoh Wataru
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
-
Saito W
Toshiba Corp. Kawasaki Jpn
-
Itoh A
Tokyo Inst. Technol. Tokyo Jpn
-
YAMAGAMI Shigeharu
Silicon Systems Research Labs.
-
Itoh Atsushi
Department Of Applied Chemistry Tokai University
関連論文
- Cervical Epidural Abscess Presenting with Brown-Sequard Syndrome in a Patient with Type 2 Diabetes
- Emission Energy Shift in GaInAs/GaInAsP Strained Quantum-Box Structures Due to 0-Dimensional Quantum-Box Effect
- PE-223 Action Potential Characteristics in the Posteromedial Right Atrium in Patients with Common Atrial Flutter(Arrhythmia, diagnosis/pathophysiology/EPS-10 (A) PE38,Poster Session (English),The 70th Anniversary Annual Scientific Meeting of the Japanese
- Cerebellopontine Angle Ependymoma with Internal Auditory Canal Enlargement and Pineal Extension : Case Report
- Subependymoma in the Lateral Ventricle Incidentally Detected by Routine Brain Examination : Case Report
- Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing ( Quantum Dot Structures)
- メタクリロ基を有するシランカップリング剤の合成
- Effect of chronic hypoxia on left ventricular function in rats
- Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma ( Quantum Dot Structures)
- Reduction of Electrical Resistance of Nanometer-Thick CoSi_2 Film on CaF_2 by Pseudomorphic Growth of CaF_2 on Si(111)
- Metal (CoSi_2)/Insulator (CaF_2) Hot Electron Transistor Fabricated by Electron-Beam Lithography on a Si Substrate
- Multiple Negative Differential Resistance due to Quantum Interference of Hot Electron Waves in Metal (CoSi_2)/Insulator (CaF_2) Heterostructures and Influence of Parasitic Circuit Elements
- Quantum Interference of Electron Wave in Metal (CoSi_2)/Insulator (CaF_2) Resonant Tunneling Hot Electron Transistor Structure
- Metal(CoSi_2)/Insulator(CaF_2) Resonant Tunneling Diode
- Exciton-Related Photoluminescence in 4H-SiC Growm by Step-Controlled Epitaxy
- Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center
- Application of Reversed Silicon Wafer Direct Bonding to Thin-Film SOI Power ICs
- Application of Reversed Silicon Wafer Direct Bonding to Thin-Film SOI Power Ics
- Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 μm Wavelength InGaAsP/InP Lasers
- The Temperature Dependence of the Efficiency and Threshold Current of In_Ga_xAs_yP__ Lasers Related to Intervalence Band Absorption
- Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 μm
- Intraband Relaxation Time in Compressive-Strained Quantum-Well Lasers
- Advantage of Strained Quantum Wire Lasers
- Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal Gate
- Scanning Tunneling Spectroscopy Study of Fe(001) Using Nonmagnetic W- and Fe-Evaporated Probe Tips
- 35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate
- Element-Specific Image and Local Work Function of Fe Submonolayer Film on Au (001) Studied by Scanning Tunneling Microscopy
- Fabrication and Characteristics of a Field Effect Transistor Using CdF_2/CaF_2 Heterostructures on a Si Substrate
- Scanning Tunneling Microscopy Study of Fe Submonolayer Film on Vicinal Au(001)
- Photoresist Chemical Mechanical Polishing for Shallow Trench Isolation
- Photoresist CMP for Shallow Trench Isolation
- Three Dimensional Optical Emission Tomography of an Inductively Coupled Plasma
- Advanced SOI Devices Using CMP and Wafer Bonding
- Robot Assisted Optical Emission Tomography in an Inductively Coupled Plasma Reactor
- Isolation and Characterization of Matrix Associated Region DNA Fragments in Rice (Oryza sativa L.)
- Nuclear Matrix and Matrix AssociationRegion DNA in Rice (Oryza sativa L.)
- Epitaxial Growth of Metal(CoSi_2)/Insulator(CaF_2) Nanometer-Thick Layered Structure on Si(111)
- Low Temperature (〜420℃) Epitaxial Growth of CaF_2/Si(111) by Ionized-Cluster-Beam Technique
- Resonant Tunneling Diodes in Si/CaF_2 Heterostructures Grown by Molecular Beam Epitaxy
- Terephthaloyl Derivatives as New Gelators;Excellent Gelation Ability and Remarkable Increase of Gel Strength by Adding Polymers
- Theoretical Gain of Quantum-Well Wire Lasers
- A 25-nm-long Channel Metal-Gate p-Type Schottky Source/Drain Metal-Oxide-Semiconductor Field Effect Transister on Separation-by-Implanted-Oxygen Substrate
- Analysis of Structure Dependence of Very Short Channel Field Effect Transistor Using Vertical Tunneling with Heterostructures on Silicon
- Analysis of the Influence of Carrier Scattering in the Channel of a Metal/Insulator Tunneling Field Effect Transistor
- Proposal and Analysis of Very Short Channel Field Effect Transistor Using Vertical Tunneling with New Heterostructures on Silicon
- InP DHBT with 0.5μm Wide Emitter alongDirection toward BM-HBT with Narrow Emitter(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Reduction of Base-Collector Capacitance inSubmicron InP/GalnAs Heterojunction Bipolar Transistors with Buried Tungsten Wires : Semiconductors
- First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance
- Seventy-nm-Pitch Patterning on CaF_2 by e-beam Exposure
- Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy
- PROTOPLAST CULTURE OF POTATO : AN IMPROVED PROCEDURE FOR ISOLATING VIABLE PROTOPLASTS
- ELFIN (ELevated Field INsulator) and SEP (S/D Elevated by Poly-Si Plugging) Process for Ultra-Thin SOI MOSFETs
- ELFIN (ELevated Field INsulator) and SEP (S/D Elevated by Poly-Si Plugging) Process for Ultra-Thin SOI MOSFETs
- Reflection High-Energy Electron Diffraction Oscillation during CaF_2 Growth on Si(111) by Partially Ionized Beam Epitaxy
- Primary Cardiac Chondrosarcoma with Large Cell Pulmonary Carcinoma
- Postpartum subarachnoid hemorrhage due to Moyamoya disease associated with renal artery stenosis
- Stereotactic directional vacuum-assisted breast biopsy using lateral approach
- Observation of Terahertz Photon-Assisted Tunneling in Triple-Barrier Resonant Tunneling Diodes Intergrated with Patch Antenna
- Terahertz Response with Gradual Change from Square-Law Detection to Photon-Assisted Tunneling in Triple-Barrier Resonant Tunneling Diodes
- Formation of Silicon and Cobalt Silicide Nanoparticles in CaF_2
- Preliminary Experiment on Direct Media Conversion from a 1.55 μm Optical Signal to a Sub-Terahertz Wave Signal Using Photon-Generated Free Carriers
- Reduction of Electrical Resistance of Nanometer-Thick CoSi 2 Film on CaF 2 by Pseudomorphic Growth of CaF 2 on Si(111)
- Suppression of Leakage Current of CdF2/CaF2 Resonant Tunneling Diode Structures Grown on Si(100) Substrates by Nanoarea Local Epitaxy
- Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy
- Observation of Terahertz Photon-Assisted Tunneling in Triple-Barrier Resonant Tunneling Diodes Integrated with Patch Antenna
- Spectral Characteristics of Linewidth Enhancement Factor $\alpha$ of Multidimensional Quantum Wells
- A 25-nm-long Channel Metal-Gate p-Type Schottky Source/Drain Metal-Oxide-Semiconductor Field Effect Transistor on Separation-by-Implanted-Oxygen Substrate