Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma (<Special Issue> Quantum Dot Structures)

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-06-30

著者

• 小田 俊理

  東工大工

• 小田 俊理

  東京工業大学量子ナノエレクトロニクス研究センター

• ODA Shunri

  Research Center for Quantum Effect Electronics, Tokyo Institute of Technology

• Oda S

  Tokyo Inst. Technol. Tokyo Jpn

• Oda Shunri

  Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut

• Oda Shunri

  The Graduate School At Nagatsuta Tokyo Institute Of Technology

• OTOBE Masanori

  Research Center for Quantum Effect Electronics and Department of Physical Electronics, Tokyo Institu

• ITOH Akira

  Research Center for Quantum Effect Electronics and Department of Physical Electronics, Tokyo Institu

• IFUKU Toru

  Research Center for Quantum Effect Electronics and Department of Physical Electronics, Tokyo Institu

• Ifuku Toru

  Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut

• Itoh A

  Ricoh Co. Ltd. Miyagi Jpn

• Otobe M

  Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut

• Itoh A

  Tokyo Inst. Technol. Tokyo Jpn

関連論文

• 26aXG-4 シリコン結合量子ドットの電子輸送特性評価(量子ドット,領域4,半導体,メゾスコピック系・局在)
• Observation and Analysis of Tunneling Properties of Single Spherical Nanocrystalline Silicon Quantum Dot (Special Issue: Solid State Devices & Materials)
• Room temperature negative differential conductance due to resonant tunneling through a single nanocrystalline-Si quantum dot
• HfO_2薄膜成長過程の分光エリプソメトリによるその場観察と第一原理計算との比較(ゲート絶縁膜, 容量膜, 機能膜及びメモリ技術)
• 21世紀の単電子デバイス
• 電子材料-ナノシリコンとネオシリコン
• ULSI技術は電気化学の時代
• Single Electron Memory Devices Based on Plasma-Derived Silicon Nanocrystals
• Electron Transport in Nanocrystalline Si Based Single Electron Transistors
• Single-Electron Tunneling Devices Based on Silicon Quantum Dots Fabricated by Plasma Process
• ナノクリスタルシリコンによる単電子デバイス
• Electric Field-Effect Enhancement by a Combination of Coplanar High-Tc Superconducting Devices with Step-Edge Junctions
• Atomic Layer-by-Layer Metal-Organic Chemical Vapor Deposition of SrTiO_3 Films with a Very Smooth Surface
• Electric Properties of Coplanar High-T_c Superconducting Field-Effect Devices
• 単電子デバイス・回路の研究状況と今後の展望
• MOCVD法による酸化物超伝導薄膜のエピタキシャル成長(酸化物のエピタキシー)
• 酸化物超伝導体の原子層MOCVD法における光学的その場成長モニタ- (原子レベルでの結晶成長機構) -- (成長表面と界面構造)
• 27pC2 水素プラズマ処理による微結晶シリコンの核形成と成長(気相成長III)
• CVDによる酸化物超伝導体のlayer by layer成長とin situ光学モニタ-
• マイクロエレクトロニクス学生実験 (基礎研究特集号) -- (基礎研究と大学教育)
• Si微粒子のカソードルミネッセンス
• ZnSの自己付活発光
• 1)ZnS青色発光ダイオード(光・フィルム技術研究会(第12回))
• シリコン技術
• 1)アモルファス・シリコン系アロイの光導電性(テレビジョン電子装置研究会(第125回))
• アモルファス・シリコン系アロイの光導電性
• 強磁場印加による(110)pMOSFETサブバンド構造の直接的観測(IEDM特集(先端CMOSデバイス・プロセス技術))
• 24aWQ-2 Lateral dot fabrication by using a MOS electric gate on SiGe hetero structure
• 24aWQ-3 PdショットキーゲートによるSi/SiGe量子ドットの作製とその評価(24aWQ 量子ドット,領域4(半導体メゾスコピック系・局在))
• ディジタルプロセスによる微結晶シリコンの作製と量子効果超集積デバイスへの応用
• Atomic Force Microscope Current-Imaging Study for Current Density through Nanocrystalline Silicon Dots Embedded in SiO_2
• Single Electron Memory Devices Based on Silicon Nanocrystals Fabricated by Very High Frequency Plasma Deposition
• ナノクリスタルシリコンによる単電子デバイス
• In Situ Optical Monitoring of Two-Dimensional Crystal Growth in Layer-by-Layer Chemical Vapor Deposition of YBa_2Cu_3O_x
• In Situ Monitoring of Optical Reflectance Oscillation in Layer-by-Layer Chemical Vapor Deposition of Oxide Superconductor Films
• Room Temperature Single-Electron Narrow-Channel Memory with Silicon Nanodots Embedded in SiO_2 Matrix
• Diagnostic Study of VHF Plasma and Deposition of Hydrogenated Amorphous Silicon Films
• Generation of Electron Cyclotron Resonance Plasma in the VHF Band
• Two-Gate Transistor for the Study of Si/SiO_2 Interface in Silicon-on-Insulator Nano-Channel and Nanocrystalline Si Memory Device
• Structure Analysis of SrTiO_3/BaTiO_3 Strained Superlattice Films Prepared by Atomic-Layer Metalorganic Chemical Vapor Deposition
• Preparation Method and Optoelectrical Properties of a-Se/Cd_xSe_ Multilayer Films
• Design of Band Potential with a-Si_xGe_:H(F) Alloys
• Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing ( Quantum Dot Structures)
• Selective Etching of Hydrogenated Amorphous Silicon by Hydrogen Plasma ( Plasma Processing)
• Preferential Nucleation of Nanocrystalline Silicon along Microsteps
• Preferential Nucleation of Nanocrystalline Silicon along Microsteps
• Pulsed-Source MOCVD of High-k Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry
• Superconducting Properties of Ultrathin Films of YBa_2Cu_3O_x Prepared by Metalorganic Chemical Vapor Deposition at 500℃
• Preparation and Characterization of YBaCuO Superconducting Films by Low-Temperature Chemical Vapor Deposition Using β-Diketonate Complex and N_2O
• Preparation of Highly Oriented Copper Films by Photo-Assisted Chemical Vapor Deposition Using β-Diketonate Complex
• Epitaxial Growth of YBaCuO Films on Sapphire at 500℃ by Metalorganie Chemical Vapor Deposition
• Hole Transport in Silicon Thin Films with Variable Hydrogen Content
• Preparation of Polycrystalline Silicon by Hydrogen-Radical-Enhanced Chemical Vapor Deposition
• Hole Transport in a-Si:H(F) Prepared by Hydrogen-Radical-Assisted Chemical Vapor Deposition
• Preparation of Highly Photoconductive a-SiGe_x from Fluorides by Controlling Reactions with Atomic Hydrogen
• Designing New Materials with Amorphous Semiconductors : Structure and Electrical Properties of Multiply Stacked a-Si/a-SiGe_x Layers
• The Role of Hydrogen Radicals in the Growth of a-Si and Related Alloys
• Highly Oriented ZnO Films Prepared by MOCVD from Diethylzinc and Alcohols
• Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma ( Quantum Dot Structures)
• Exciton-Related Photoluminescence in 4H-SiC Growm by Step-Controlled Epitaxy
• Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center
• Application of Reversed Silicon Wafer Direct Bonding to Thin-Film SOI Power ICs
• Application of Reversed Silicon Wafer Direct Bonding to Thin-Film SOI Power Ics
• Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal Gate
• Scanning Tunneling Spectroscopy Study of Fe(001) Using Nonmagnetic W- and Fe-Evaporated Probe Tips
• 35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate
• Element-Specific Image and Local Work Function of Fe Submonolayer Film on Au (001) Studied by Scanning Tunneling Microscopy
• Fabrication and Characteristics of a Field Effect Transistor Using CdF_2/CaF_2 Heterostructures on a Si Substrate
• Scanning Tunneling Microscopy Study of Fe Submonolayer Film on Vicinal Au(001)
• Photoresist Chemical Mechanical Polishing for Shallow Trench Isolation
• Photoresist CMP for Shallow Trench Isolation
• Three Dimensional Optical Emission Tomography of an Inductively Coupled Plasma
• Advanced SOI Devices Using CMP and Wafer Bonding
• Robot Assisted Optical Emission Tomography in an Inductively Coupled Plasma Reactor
• シリコンナノ結晶のCVD成長と新機能 (特集 ナノ結晶の成長と新機能)
• Stabilization of Oxygen Diffusion in Ga-Doped YBa_2Cu_3O_ Thin Films Observed by Spectroscopic Ellipsometry
• Reproducible Growth of Metalorganic Chemical Vapor Deposition Derived YBa_2Cu_3O_x Thin Films Using Ultrasonic Gas Concentration Analyzer
• In Situ Growth Monitoring During Metalorganic Chemical Vapor Deposition of YBa_2Cu_3O_x Thin Films by Spectroscopic Ellipsometry
• TFTとその応用
• アモルファスシリコンを用いた薄膜トランジスタとその集積回路
• シリコンナノ結晶のCVD成長と新機能(ナノ結晶の成長と新機能)
• Preparation of Microcrystalline Silicon Films by Very-High-Frequency Digital Chemical Vapor Deposition
• Single-Electron Transistors with Two Self-Aligned Gates
• Enhanced Dielectric Properties in SrTiO_3/BaTiO_3 Strained Superlattice Structures Prepared by Atomic-Layer Metalorganic Chemical Vapor Deposition
• Single-Electron Tunneling in Nanocrystalline Silicon
• Electronic States In Glow-Discharge a-SiGe_x:H:(F) Alloys
• 高不純物濃度のETSOI (Extremely-thin SOI)拡散層における移動度の異常な振る舞い(IEDM特集(先端CMOSデバイス・プロセス技術))
• 28aHD-1 Si/SiGe量子ドットにおけるショットキーゲート電極に対する考察(28aHD 量子ドット,領域4(半導体,メゾスコピック系・局在))
• 24aTR-2 Si/SiGe 2重量子ドットにおける高周波応答について(24aTR 量子ドット,領域4(半導体,メゾスコピック系・局在))
• 23pTM-12 シリコン量子ドットにおけるスピン効果と磁場依存性(23pTM 量子ドット,領域4(半導体,メゾスコピック系・局在))
• Preferential Nucleation of Nanocrystalline Silicon along Microsteps
• Pulsed-Source MOCVD of High-$k$ Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry

もっと見る 閉じる

スポンサーリンク