Pulsed-Source MOCVD of High-$k$ Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry
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概要
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The formation of high-$k$ thin films by pulsed-source metal-organic chemical vapor deposition (MOCVD) has been investigated with in situ spectroscopic ellipsometry. It is demonstrated that spectroscopic ellipsometry is an effective method for in situ monitoring of the fabrication of high-$k$ dielectric thin films with thicknesses of several nm's. Thin yttrium oxide films with average roughnesses smaller than the thickness of a single molecular layer, and with a capacitance equivalent thickness ${\sim}1.7$ nm were obtained. Thicknesses and optical properties of each individual layer were also extracted from spectroscopic ellipsometry, by fitting to appropriate structural models.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-04-15
著者
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Oda Shunri
Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut
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Tung Raymond
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Endoh Masato
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Hattori Takeo
Department Of Electrical & Electronic Engineering Musashi Institute Of Technology
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Kurosawa Masatoshi
Department Of Electrical And Electronic Engineering Musashi Institute Of Technology
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Tsuchiya Yoshishige
Research Center For Quantum Effect Electronics Tokyo Institute Of Technology
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Hattori Takeo
Department of Electrical and Electronic Engineering, Musashi Institute of Technology, 1-28-1, Tamazutsumi, Setagaya-ku, Tokyo 158-8557, Japan
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Kurosawa Masatoshi
Department of Electrical and Electronic Engineering, Musashi Institute of Technology, 1-28-1, Tamazutsumi, Setagaya-ku, Tokyo 158-8557, Japan
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Endoh Masato
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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