Depth Profiling of Si-SiO_2 Interface Structures
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概要
- 論文の詳細を見る
The Si-SiO_2 interface structures of thermally grown oxide films on (100) surfaces were studied using three types of depth profiling measurement. Analysis of these measurements confirms the interface structures determined previously by nondestructive depth profiling.^<1)> The appicability of chemical depth profiling to the study of interface structures was also studied. A new method of spectral analysis, used successfully in the present measurements, is presented.
- 社団法人応用物理学会の論文
- 1986-04-20
著者
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Yamabe Kikuo
Vlsi Research Center Toshiba Corp.
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Yamabe Kikuo
Vlsi Research Center Toshiba Corporation
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Hattori Takeo
Department Of Electrical & Electronic Engineering Musashi Institute Of Technology
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SUZUKI Toshihisa
Department of Electrical and Electronic Engineering, Musashi Institute of Technology
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MUTO Masaaki
Department of Electrical and Electronic Engineering, Musashi Institute of Technology
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HARA Motohiro
Department of Electrical and Electronic Engineering, Musashi Institute of Technology
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Muto Masaaki
Department Of Electrical And Electronic Engineering Musashi Institute Of Technology:(present Address
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Hara Motohiro
Department Of Electrical And Electronic Engineering Musashi Institute Of Technology
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Suzuki Toshihisa
Department Of Electrical And Electronic Engineering Musashi Institute Of Technology:(present Address
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Suzuki Toshihisa
Department of Applied Chemistry, Faculty of Engineering, Keio University
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