Modification of Silicon Surface Using Atomic Force Microscope with Conducting Probe
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-07-15
著者
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Hattori Takeo
Department of Electrical and Electronic Engineering, Musashi Institute of Technology
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Hattori Takeo
Department Of Electrical & Electronic Engineering Musashi Institute Of Technology
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YASUTAKE Masatoshi
Scientific Instruments Division, Development Department, Seiko Instruments Inc.
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EJIRI Yasunori
Department of Electrical and Electronic Engineering, Musashi Institute of Technology
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Yasutake Masatoshi
Scientific Instruments Division Development Department Seiko Instruments Inc.
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Ejiri Yasunori
Department Of Electrical And Electronic Engineering Musashi Institute Of Technology
関連論文
- Initial Stage of Oxidation of Hydrogen-Termimated Si(100)-2×1 Surface
- Characterization of Chemical-Vapor-Deposited Amorphous-Silicon Films
- Normal-Pressure and Low-Temperature Thermal Oxidation of Silicon
- Pulsed-Source MOCVD of High-k Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry
- Superconducting Properties of Ultrathin Films of YBa_2Cu_3O_x Prepared by Metalorganic Chemical Vapor Deposition at 500℃
- Preparation and Characterization of YBaCuO Superconducting Films by Low-Temperature Chemical Vapor Deposition Using β-Diketonate Complex and N_2O
- Preparation of Highly Oriented Copper Films by Photo-Assisted Chemical Vapor Deposition Using β-Diketonate Complex
- Epitaxial Growth of YBaCuO Films on Sapphire at 500℃ by Metalorganie Chemical Vapor Deposition
- Silicon-Hydrogen Bonds in Silicon Native Oxides Formed during Wet Chemical Treatments
- Interface Roughness Produced by Nitrogen Atom Incorporation at a SiO_2/Si(100) Interface : Semiconductors
- Atomic Layer Etching of Silicon by Thermal Desorption Method
- A Proposed Atomic-Layer-Deposition of Germanium on Si Surface
- Reproducible Growth of Metalorganic Chemical Vapor Deposition Derived YBa_2Cu_3O_x Thin Films Using Ultrasonic Gas Concentration Analyzer
- In Situ Growth Monitoring During Metalorganic Chemical Vapor Deposition of YBa_2Cu_3O_x Thin Films by Spectroscopic Ellipsometry
- Atomic-Scale Depth Profiling of Oxides/Si(111) and Oxynitrides/Si(100) Interface
- Influence of Interface Structure on Oxidation Rate of Silicon : Surfaces, Interfaces, and Films
- Atomic Scale Oxidation Process on Hydrogen-Terminated Silicon Surface
- Preparation of a Thin Silicon Nitride Layer by Photo-CVD and Its Application to InP MISFET's
- Si-SiO_2 Interface Structures : Chemical Shifts in Si 2p Photoelectron Spectra : Surfaces, Interfaces and Films
- Low-Temperature Thermal-Oxidation of Silicon
- Chemical Bonds at and Near the SiO_2/Si Interface
- Optical Absorption in Ultrathin Silicon Oxide Film (SOLID STATE DEVICES AND MATERIALS 1)
- Electron Tunneling through Chemical Oxide of Silicon
- Electron Tunneling through Chemical Oxide of Silicon
- Effects of Light Pulse Duration on Excimer-Laser Crystallization Characteristics of Silicon Thin Films
- Effect of Preoxide on the Structure of Thernmal Oxide
- Initial Stage of SiO_2/Si Interface Formation on Si(111) Surface
- Modification of Silicon Surface Using Atomic Force Microscope with Conducting Probe
- Magnetic Shielding Using High-T_c Superconductor : Magnetism, Magnetic Materials and Devices
- Effect of Silicon Wafer In Situ Cleaning on the Chemical Structure of Ultrathin Silicon Oxide Film
- Chemical Structures of Native Oxides Formed during Wet Chemical Treatments
- Optical Branching Device for Arrayed Waveguides
- Optical Beam Scanner with Phase-Variable Semiconductor Waveguides
- Depth Profiling of Si-SiO_2 Interface Structures
- Energy Barrier for Valence Electrons at SiO_2/Si(111) Interface
- Surface and Interface Structures of Ultra-Thin Thermal Oxides on Si(100)
- Periodic Changes in SiO_2/Si(111) Interface Structures with Progress of Thermal Oxidation
- Correlation between Surface Microrougnness of Silicon Oxide Film and SiO_2/Si Interface Structure
- Structures and Electronic States of Gadolinium Oxide Clusters
- Pulsed-Source MOCVD of High-$k$ Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry