Periodic Changes in SiO_2/Si(111) Interface Structures with Progress of Thermal Oxidation
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概要
- 論文の詳細を見る
Changes in SiO_2/Si(111) interface structures during the progress of oxidation through 0.5-nm-thick preoxide were investigated at 600 and 800℃ in dry oxygen with a pressure of 133 Pa by measuring oxidation-induced changes in Si 2p photoelectron spectra. The following results are obtained: 1) at 800℃, oxidation reaction occurs monolayer by monolayer at the interface, however, 2) monoatotnic steps exist at the interface in every stage of oxidation.
- 社団法人応用物理学会の論文
- 1994-05-01
著者
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Hattori Takeo
Department Of Electrical And Electronic Engineering Musashi Institute Of Technology
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Hattori Takeo
Department Of Electrical & Electronic Engineering Musashi Institute Of Technology
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OHISHI Kazuaki
Department of Electrical and Electronic Engineering, Musashi Institute of Technology
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Ohishi K
Department Of Electrical And Electronic Engineering Musashi Institute Of Technology
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Ohishi Kazuaki
Department Of Electrical And Electronic Engineering Musashi Institute Of Technology
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