Correlation between Surface Microrougnness of Silicon Oxide Film and SiO_2/Si Interface Structure
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概要
- 論文の詳細を見る
It was found, from combined measurements of the surface microrotughness of sillicon oxide film and the Si0_2/Si interface structure, that the surface microroughness of thermal oxide film formed on a Si(111) surface changes periodically with the progress of oxidation in accordance with periodic changes in interface structtures, Therefore,the changes in interface structures can be detected by measuring the oxidation-induced surface microroughness.
- 社団法人応用物理学会の論文
- 1997-04-01
著者
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Hattori Tetsuya
Depaetment Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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HATTORI Takeo
New Industry Creation Hatchery Center, Tohoku University
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Hattori Takeo
Department Of Electrical & Electronic Engineering Musashi Institute Of Technology
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OHASHI Masatoshi
Department of Electrical and Electronic Engineering, Musashi Institute of Technology
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Ohashi Masatoshi
Department Of Electrical & Electronic Engineering Musashi Institute Of Technology
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