Far-Infrared Optical Properties of Quenched Germanium; V. Uniaxial Stress Effects on the SA_1 Acceptors : Semiconductors and Semiconductor Devices

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Far-infrared absorption spectra of quenched germanium were measured under a uniaxial stress along the <100>, <110> and <111> crystallographic orientations. It is concluded from the analyses of the number of the bands split with stress and from the feature of splitting of each band that the SA_1 acceptor, which is the shallowest one in the quenched-in acceptors and has a ground state split into two levels without a uniaxial stress, is constructed from a defect in which the symmetric axis is along a <111> crystallographic axis. From the comparison between the results on the SA_1 acceptors and the SA_<1Au> and SA_<1Ag> acceptors which are the perturbed SA_1 acceptors, it is proposed that the SA acceptor is constructed from a pair of substitutional and interstitial atoms along the <111> axis and that SA_<1Au> and SA_<1Ag> acceptors are the defects consisting of the SA_1 acceptor together with either Au or Ag impurities along the <111> axis, respectivery.
社団法人応用物理学会の論文
1988-05-20