Characterization of Silicon Implanted with Focused Ion Beam by Raman Microprobe
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-06-20
著者
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NAKASHIMA Shin-ichi
Department of Applied Physics,Osaka University
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MORIMOTO Hiroaki
LSI R&D Laboratory, Mitsubisi Electric Corporation
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MITSUISHI Akiyoshi
Department of Applied Physics,Osaka University
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MIZOGUCHI Kohji
Department of Applied Physics, Osaka University
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Kato Tadao
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Onoda Hiroshi
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Mizoguchi Kohji
Department Of Applied Physics Faculty Of Engineering Osaka City University
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Mitsuishi A
Department Of Applied Physics Osaka University
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Mitsuishi Akiyoshi
Department Of Applied Physics Faculty Of Engineering Osaka University
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FUJII Akihito
Department of Applied Physics, Osaka University
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Fujii A
Okayama Univ. Graduate School Of Medicine And Dentistry
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Nakashima S
Ntt Telecommunications Energy Lab. Atsugi Jpn
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Nakashima Shin-ichi
Department Of Applied Physics Faculty Of Engineering Osaka University
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Morimoto Hiroaki
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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KATO Tadao
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
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