Cold and Low-Energy Ion Etching (COLLIE)
スポンサーリンク
概要
- 論文の詳細を見る
It is shown that a new cold and low-energy ion etching system(COLLIE) is effective as a dry etching technique for fabrication of VLSI devices. In the COLLIE system, plasma instabilities are suppressed by an MHD stable magnetic field consisting of a solenoid coil and multicusp magnets. The ion temperature, which is strongly related to plasma instabilities, is lowered below 2 eV in this system. Etched profiles show a strong anisotropic feature without applying any external electrical bias. As small angular distribution of incident ions to a sample is realized, the microloading effect is greatly improved.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-10-20
著者
-
Fujiwara Nobuo
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
-
Nishioka Kyusaku
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
-
Kato Tadao
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
-
Shibano Teruo
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
-
Fujiwara Nobuo
LSI Research and Development Laboratory Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664
-
Nishioka Kyusaku
LSI Research and Development Laboratory Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664
-
Kato Tadao
LSI Research and Development Laboratory Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664
関連論文
- Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma : Etching and Deposition Technology
- ECR Plasma Etching with Heavy Halogen Ions : Etching and Deposition Technology
- Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma
- ECR Plasma Etching with Heavy Halogen Ions
- Characterization of Silicon Implanted with Focused Ion Beam by Raman Microprobe
- Cold and Low-Energy Ion Etching(COLLIE) : Etching and Deposition Technology
- Reactive Ion Beam Etching Using a Selective Gallium Doping Method
- Cold and Low-Energy Ion Etching (COLLIE)