ECR Plasma Etching with Heavy Halogen Ions : Etching and Deposition Technology
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-01-31
著者
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ABE Haruhiko
LSI Laboratory, Mitsubishi Electric Corporation
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YONEDA Masahiro
LSI Research and Development Labotary, Mitsubishi Electric Corporation
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SAWAI Hisaharu
LSI Research and Development Labotary, Mitsubishi Electric Corporation
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FUJIWARA Nobuo
LSI Research and Development Labotary, Mitsubishi Electric Corporation
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NISHIOKA Kyusaku
LSI Research and Development Labotary, Mitsubishi Electric Corporation
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ABE Haruhiko
LSI Research and Development Labotary, Mitsubishi Electric Corporation
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Nakamoto Kazuo
Lsi Laboratory Mitsubishi Electric Corporation
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Sawai H
Lsi Laboratory Mitsubishi Electric Corporation
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Fujiwara Nobuo
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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YONEDA Masahiro
ULSI Laboratory, Mitsubishi Electric Corporation
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Fujiwara N
Ulsi Development Center Mitsubishi Electric Corporation
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Nishioka Kyusaku
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Abe Haruhiko
Lsi R&d Lab. Mitsubishi Electric Corp.
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Nishioka K
Mitsubishi Electric Corp. Hyogo Jpn
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Abe Haruhiko
Lsi Laboratory Mitsubishi Electric Corporation
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Yoneda M
Api Corp. Ltd. Gifu Jpn
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Yoneda Masahiro
Lsi R&d Laboratory Mitsubishi Electric Corporation
関連論文
- Developments of plasma etching technology for fabricating semiconductor devices
- SiO_2 Etching Characteristics with Low-Energy Ions Generated by Electron Cyclotron Resonance Plasma Using CF_4 and NF_3 Gases
- High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient : Etching
- High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient
- Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma : Etching and Deposition Technology
- ECR Plasma Etching with Heavy Halogen Ions : Etching and Deposition Technology
- Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma
- ECR Plasma Etching with Heavy Halogen Ions
- Effect of Electron Shading on Gate Oxide Degradation
- Reduction of Charge Build-Up with Pulse-Modulated Bias in Pulsed Electron Cyclotron Resonance Plasma
- Influence of Puled Electron Cyclotron Resonance Plasma on Gate Electrode Etching
- Reduction of Charge Build-up with High-Power Pulsed Electron Cyclotron Resonance Plasma
- Evaluation of Electron Shading Charge Buildup Damage Using Metal-Nitride-Oxide-Silicon Capacitors
- Etching Characteristics of WSi_2 with Pulsed-Electron Cyclotron Resonance Plasma
- Precise Evaluation of Pattern Distortion with Variation of the Impurity Concentration and Conductivity of Silicon Films
- SiO_2 Etching in C_4F_8/O_2 Electron Cyclotron Resonance Plasma
- Analysis of Fluorocarbon Deposition during SiO_2 Etching
- Pulsed Plasma Processing for Reduction of Profile Distortion Induced by Charge Buildup in Electron Cyclotron Resonance Plasma
- Profile Control of poly-Si Etching in Electron Cyclotron Resonance Plasma
- Mechanism of Reactive Ion Etching Lag in WSi_2 Etching Using Electron Cyclotron Resonance Plasma
- Effect Plasma Transport on Etched Profiles with Surface Topography in Diverging Field Electron Cyclotron Resonance Plasma
- Transformation of Dense Contact Holes during SiO_2 Etching
- Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching
- Electron Beam Direct Writing Technologies for 0.3-μm ULSI Devices : Lithography Technology
- Electron Beam Direct Writing Technologies for 0.3-μm ULSI Devices
- Low-Temperature Reactive Ion Etching for Multi-Layer Resist (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Mechanism for AlSiCu Alloy Corrosion
- Crystal Growth and Magnetic Properties of SmFe_2
- Magnetic Anisotropy of New Intermetallic Compound SmFe_7
- Magnetic Properties of SmFe_3 Single Crystal
- Mechanism of AlCu Film Corrosion
- Profile Distortion Caused by Local Electric Field in Polysilicon Etching
- Influence of Poly-Si Potential on Profile Distortion Caused by Charge Accumulation
- A High-Capacitance Trench Structure (Hi-CAT) for Megabit LSI Memories
- Fabrication of Storage Capacitance-Enhanced Capacitors with a Rough Electrode
- Highty Selective Contact Hole Etching Using Electron Cyclotron Resonance Plasma
- Film Characteristics of APCVD Oxide Using Organic Silicon and Ozone
- Cold and Low-Energy Ion Etching(COLLIE) : Etching and Deposition Technology
- Reactive Ion Beam Etching Using a Selective Gallium Doping Method
- Electron Scattering from Si Surface and Interface by Cross-Sectional Transmission Electron Microscopy
- Very-Low-Temperature Preparation of Poly-Si Films by Plasma Chemical Vapor Deposition Using SiF_4/SiH_4/H_2 Gases
- Plasma Etching of ITO Thin Films Using a CH_4/H_2 Gas Mixture
- Cold and Low-Energy Ion Etching (COLLIE)