Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-04-01
著者
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Fujiwara Nobuo
Ulsi Laboratory Mitsubishi Electric Corporation
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SAKAMORI Shigenori
ULSI Laboratory, Mitsubishi Electric Corporation
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MIYATAKE Hiroshi
ULSI Laboratory, Mitsubishi Electric Corporation
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Fujiwara N
Ulsi Development Center Mitsubishi Electric Corporation
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YONEKURA Kazumasa
ULSI Laboratory, Mitsubishi Electric Corporation
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KIRITANI Masahide
ULSI Laboratory, Mitsubishi Electric Corporation
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YOKOI Takahiro
ULSI Laboratory, Mitsubishi Electric Corporation
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- Effect of Electron Shading on Gate Oxide Degradation
- Reduction of Charge Build-Up with Pulse-Modulated Bias in Pulsed Electron Cyclotron Resonance Plasma
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- Reduction of Charge Build-up with High-Power Pulsed Electron Cyclotron Resonance Plasma
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- Analysis of Fluorocarbon Deposition during SiO_2 Etching
- Pulsed Plasma Processing for Reduction of Profile Distortion Induced by Charge Buildup in Electron Cyclotron Resonance Plasma
- Profile Control of poly-Si Etching in Electron Cyclotron Resonance Plasma
- Mechanism of Reactive Ion Etching Lag in WSi_2 Etching Using Electron Cyclotron Resonance Plasma
- Effect Plasma Transport on Etched Profiles with Surface Topography in Diverging Field Electron Cyclotron Resonance Plasma
- Transformation of Dense Contact Holes during SiO_2 Etching
- Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching
- Mechanism for AlSiCu Alloy Corrosion
- Crystal Growth and Magnetic Properties of SmFe_2
- Magnetic Anisotropy of New Intermetallic Compound SmFe_7
- Magnetic Properties of SmFe_3 Single Crystal
- Mechanism of AlCu Film Corrosion
- Profile Distortion Caused by Local Electric Field in Polysilicon Etching
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- Electron Scattering from Si Surface and Interface by Cross-Sectional Transmission Electron Microscopy
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- Mechanism of Reactive Ion Etching Lag for Aluminum Alloy Etching
- Transformation of Dense Contact Holes during SiO2 Etching
- Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching
- Effect of Electron Shading on Gate Oxide Degradation
- Reduction of Charge Build-Up with Pulse-Modulated Bias in Pulsed Electron Cyclotron Resonance Plasma