Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1998-04-01

著者

• Fujiwara Nobuo

  Ulsi Laboratory Mitsubishi Electric Corporation

• SAKAMORI Shigenori

  ULSI Laboratory, Mitsubishi Electric Corporation

• MIYATAKE Hiroshi

  ULSI Laboratory, Mitsubishi Electric Corporation

• Fujiwara N

  Ulsi Development Center Mitsubishi Electric Corporation

• YONEKURA Kazumasa

  ULSI Laboratory, Mitsubishi Electric Corporation

• KIRITANI Masahide

  ULSI Laboratory, Mitsubishi Electric Corporation

• YOKOI Takahiro

  ULSI Laboratory, Mitsubishi Electric Corporation

関連論文

• Developments of plasma etching technology for fabricating semiconductor devices
• SiO_2 Etching Characteristics with Low-Energy Ions Generated by Electron Cyclotron Resonance Plasma Using CF_4 and NF_3 Gases
• High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient : Etching
• High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient
• Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma : Etching and Deposition Technology
• ECR Plasma Etching with Heavy Halogen Ions : Etching and Deposition Technology
• Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma
• ECR Plasma Etching with Heavy Halogen Ions
• Effect of Electron Shading on Gate Oxide Degradation
• Reduction of Charge Build-Up with Pulse-Modulated Bias in Pulsed Electron Cyclotron Resonance Plasma
• Influence of Puled Electron Cyclotron Resonance Plasma on Gate Electrode Etching
• Reduction of Charge Build-up with High-Power Pulsed Electron Cyclotron Resonance Plasma
• Evaluation of Electron Shading Charge Buildup Damage Using Metal-Nitride-Oxide-Silicon Capacitors
• Etching Characteristics of WSi_2 with Pulsed-Electron Cyclotron Resonance Plasma
• Precise Evaluation of Pattern Distortion with Variation of the Impurity Concentration and Conductivity of Silicon Films
• SiO_2 Etching in C_4F_8/O_2 Electron Cyclotron Resonance Plasma
• Analysis of Fluorocarbon Deposition during SiO_2 Etching
• Pulsed Plasma Processing for Reduction of Profile Distortion Induced by Charge Buildup in Electron Cyclotron Resonance Plasma
• Profile Control of poly-Si Etching in Electron Cyclotron Resonance Plasma
• Mechanism of Reactive Ion Etching Lag in WSi_2 Etching Using Electron Cyclotron Resonance Plasma
• Effect Plasma Transport on Etched Profiles with Surface Topography in Diverging Field Electron Cyclotron Resonance Plasma
• Transformation of Dense Contact Holes during SiO_2 Etching
• Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching
• Mechanism for AlSiCu Alloy Corrosion
• Crystal Growth and Magnetic Properties of SmFe_2
• Magnetic Anisotropy of New Intermetallic Compound SmFe_7
• Magnetic Properties of SmFe_3 Single Crystal
• Mechanism of AlCu Film Corrosion
• Profile Distortion Caused by Local Electric Field in Polysilicon Etching
• Influence of Poly-Si Potential on Profile Distortion Caused by Charge Accumulation
• Effect of Electric Field on Electron Cyclotron Resonance Plasma Etching
• Electron Scattering from Si Surface and Interface by Cross-Sectional Transmission Electron Microscopy
• Effect of N_2 Addition on Aluminum Alloy Etching by Electron Cyclotron Resonance Reactive Ion Etching and Magnetically Enhanced Reactive Ion Etching
• Mechanism of Reactive Ion Etching Lag for Aluminum Alloy Etching
• Transformation of Dense Contact Holes during SiO2 Etching
• Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching
• Effect of Electron Shading on Gate Oxide Degradation
• Reduction of Charge Build-Up with Pulse-Modulated Bias in Pulsed Electron Cyclotron Resonance Plasma

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