Mechanism of AlCu Film Corrosion

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Developments of plasma etching technology for fabricating semiconductor devices
SiO_2 Etching Characteristics with Low-Energy Ions Generated by Electron Cyclotron Resonance Plasma Using CF_4 and NF_3 Gases
High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient : Etching
High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient
Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma : Etching and Deposition Technology
ECR Plasma Etching with Heavy Halogen Ions : Etching and Deposition Technology
Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma
ECR Plasma Etching with Heavy Halogen Ions
Effect of Electron Shading on Gate Oxide Degradation
Reduction of Charge Build-Up with Pulse-Modulated Bias in Pulsed Electron Cyclotron Resonance Plasma
Influence of Puled Electron Cyclotron Resonance Plasma on Gate Electrode Etching
Reduction of Charge Build-up with High-Power Pulsed Electron Cyclotron Resonance Plasma
Evaluation of Electron Shading Charge Buildup Damage Using Metal-Nitride-Oxide-Silicon Capacitors
Etching Characteristics of WSi_2 with Pulsed-Electron Cyclotron Resonance Plasma
Precise Evaluation of Pattern Distortion with Variation of the Impurity Concentration and Conductivity of Silicon Films
SiO_2 Etching in C_4F_8/O_2 Electron Cyclotron Resonance Plasma
Analysis of Fluorocarbon Deposition during SiO_2 Etching
Pulsed Plasma Processing for Reduction of Profile Distortion Induced by Charge Buildup in Electron Cyclotron Resonance Plasma
Profile Control of poly-Si Etching in Electron Cyclotron Resonance Plasma
Mechanism of Reactive Ion Etching Lag in WSi_2 Etching Using Electron Cyclotron Resonance Plasma
Effect Plasma Transport on Etched Profiles with Surface Topography in Diverging Field Electron Cyclotron Resonance Plasma
Transformation of Dense Contact Holes during SiO_2 Etching
Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching
Electron Beam Direct Writing Technologies for 0.3-μm ULSI Devices : Lithography Technology
Electron Beam Direct Writing Technologies for 0.3-μm ULSI Devices
Low-Temperature Reactive Ion Etching for Multi-Layer Resist (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Mechanism for AlSiCu Alloy Corrosion
Crystal Growth and Magnetic Properties of SmFe_2
Magnetic Anisotropy of New Intermetallic Compound SmFe_7
Magnetic Properties of SmFe_3 Single Crystal
Mechanism of AlCu Film Corrosion
Profile Distortion Caused by Local Electric Field in Polysilicon Etching
Influence of Poly-Si Potential on Profile Distortion Caused by Charge Accumulation
Effect of Electric Field on Electron Cyclotron Resonance Plasma Etching
Fabrication of Storage Capacitance-Enhanced Capacitors with a Rough Electrode
Highty Selective Contact Hole Etching Using Electron Cyclotron Resonance Plasma
Electron Scattering from Si Surface and Interface by Cross-Sectional Transmission Electron Microscopy
Effect of N_2 Addition on Aluminum Alloy Etching by Electron Cyclotron Resonance Reactive Ion Etching and Magnetically Enhanced Reactive Ion Etching
Mechanism of Reactive Ion Etching Lag for Aluminum Alloy Etching
Transformation of Dense Contact Holes during SiO2 Etching
Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching
Effect of Electron Shading on Gate Oxide Degradation
Reduction of Charge Build-Up with Pulse-Modulated Bias in Pulsed Electron Cyclotron Resonance Plasma

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