Reduction of Charge Build-Up with Pulse-Modulated Bias in Pulsed Electron Cyclotron Resonance Plasma
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概要
- 論文の詳細を見る
Topography dependent charging is one of the most significant problems in high-density plasma and low-energy processing. In this paper, we report on the detailed analysis of etching characteristics under various pulse modulations of microwave and rf biases to simultaneously achieve no local side etch and a high selectivity. Consequently, pulse rf bias in pulse plasma is very efficient for reducing the notch and charge build-up. In contrast, continuous rf bias in pulse plasma is not effective in reducing the charge build-up. In addition, we discuss the reduction mechanism of notch and charge build-up.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-04-30
著者
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Fujiwara Nobuo
Ulsi Laboratory Mitsubishi Electric Corporation
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MARUYAMA Takahiro
ULSI Laboratory, Mitsubishi Electric Corporation
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Miyatake Hiroshi
Ulsi Development Center Mitsubishi Electric Corporation
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Ogino Satoshi
Ulsi Laboratory Mitsubishi Electric Corporation
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Fujiwara Nobuo
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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Ogino Satoshi
ULSI Laboratory, Mitsubishi Electric Corporation,
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