Fujiwara Nobuo | ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

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著作論文

Influence of Puled Electron Cyclotron Resonance Plasma on Gate Electrode Etching
Reduction of Charge Build-up with High-Power Pulsed Electron Cyclotron Resonance Plasma
Evaluation of Electron Shading Charge Buildup Damage Using Metal-Nitride-Oxide-Silicon Capacitors
Etching Characteristics of WSi_2 with Pulsed-Electron Cyclotron Resonance Plasma
Precise Evaluation of Pattern Distortion with Variation of the Impurity Concentration and Conductivity of Silicon Films
SiO_2 Etching in C_4F_8/O_2 Electron Cyclotron Resonance Plasma
Pulsed Plasma Processing for Reduction of Profile Distortion Induced by Charge Buildup in Electron Cyclotron Resonance Plasma
Profile Control of poly-Si Etching in Electron Cyclotron Resonance Plasma
Mechanism of Reactive Ion Etching Lag in WSi_2 Etching Using Electron Cyclotron Resonance Plasma
Effect Plasma Transport on Etched Profiles with Surface Topography in Diverging Field Electron Cyclotron Resonance Plasma
Mechanism of AlCu Film Corrosion
Profile Distortion Caused by Local Electric Field in Polysilicon Etching
Influence of Poly-Si Potential on Profile Distortion Caused by Charge Accumulation
Effect of Electric Field on Electron Cyclotron Resonance Plasma Etching
Effect of N_2 Addition on Aluminum Alloy Etching by Electron Cyclotron Resonance Reactive Ion Etching and Magnetically Enhanced Reactive Ion Etching
Mechanism of Reactive Ion Etching Lag for Aluminum Alloy Etching
Transformation of Dense Contact Holes during SiO2 Etching
Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching
Effect of Electron Shading on Gate Oxide Degradation
Reduction of Charge Build-Up with Pulse-Modulated Bias in Pulsed Electron Cyclotron Resonance Plasma

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