Effect of Electric Field on Electron Cyclotron Resonance Plasma Etching
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-11-15
著者
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NISHIOKA Kyusaku
Kitaitami Works, Mitsubishi Electric Corporation
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Fujiwara Nobuo
Ulsi Laboratory Mitsubishi Electric Corporation
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Nishioka Kyusaku
Kitaitami Works Mitsubishi Electric Corporation
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Fujiwara Nobuo
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
関連論文
- High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient : Etching
- High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient
- Effect of Electron Shading on Gate Oxide Degradation
- Reduction of Charge Build-Up with Pulse-Modulated Bias in Pulsed Electron Cyclotron Resonance Plasma
- Influence of Puled Electron Cyclotron Resonance Plasma on Gate Electrode Etching
- Reduction of Charge Build-up with High-Power Pulsed Electron Cyclotron Resonance Plasma
- Evaluation of Electron Shading Charge Buildup Damage Using Metal-Nitride-Oxide-Silicon Capacitors
- Etching Characteristics of WSi_2 with Pulsed-Electron Cyclotron Resonance Plasma
- Precise Evaluation of Pattern Distortion with Variation of the Impurity Concentration and Conductivity of Silicon Films
- SiO_2 Etching in C_4F_8/O_2 Electron Cyclotron Resonance Plasma
- Pulsed Plasma Processing for Reduction of Profile Distortion Induced by Charge Buildup in Electron Cyclotron Resonance Plasma
- Profile Control of poly-Si Etching in Electron Cyclotron Resonance Plasma
- Mechanism of Reactive Ion Etching Lag in WSi_2 Etching Using Electron Cyclotron Resonance Plasma
- Effect Plasma Transport on Etched Profiles with Surface Topography in Diverging Field Electron Cyclotron Resonance Plasma
- Transformation of Dense Contact Holes during SiO_2 Etching
- Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching
- Mechanism of AlCu Film Corrosion
- Profile Distortion Caused by Local Electric Field in Polysilicon Etching
- Influence of Poly-Si Potential on Profile Distortion Caused by Charge Accumulation
- Effect of Electric Field on Electron Cyclotron Resonance Plasma Etching
- Effect of N_2 Addition on Aluminum Alloy Etching by Electron Cyclotron Resonance Reactive Ion Etching and Magnetically Enhanced Reactive Ion Etching
- Mechanism of Reactive Ion Etching Lag for Aluminum Alloy Etching
- Transformation of Dense Contact Holes during SiO2 Etching
- Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching
- Effect of Electron Shading on Gate Oxide Degradation
- Reduction of Charge Build-Up with Pulse-Modulated Bias in Pulsed Electron Cyclotron Resonance Plasma