High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-11-30

著者

• FUJIWARA Nobuo

  LSI Laboratory, Mitsubishi Electric Corporation

• YONEDA Masahiro

  LSI Laboratory, Mitsubishi Electric Corporation

• NAKAMOTO Kazuo

  LSI Laboratory, Mitsubishi Electric Corporation

• ABE Haruhiko

  LSI Laboratory, Mitsubishi Electric Corporation

• SAWAI Hisaharu

  LSI Laboratory, Mitsubishi Electric Corporation

• NISHIOKA Kyusaku

  Kitaitami Works, Mitsubishi Electric Corporation

• HORIE Kazuo

  Kitaitami Works, Mitsubishi Electric Corporation

• Horie K

  Univ. Tokyo Tokyo Jpn

• Horie Kazuo

  Kitaitami Works Mitsubishi Electric Corporation

• Nakamoto Kazuo

  Lsi Laboratory Mitsubishi Electric Corporation

• Sawai H

  Lsi Laboratory Mitsubishi Electric Corporation

• YONEDA Masahiro

  ULSI Laboratory, Mitsubishi Electric Corporation

• Fujiwara N

  Ulsi Development Center Mitsubishi Electric Corporation

• Nishioka Kyusaku

  Kitaitami Works Mitsubishi Electric Corporation

• Sawai Hisaharu

  Lsi Laboratory Mitsubishi Electric Corporation

• Nishioka K

  Mitsubishi Electric Corp. Hyogo Jpn

• Abe Haruhiko

  Lsi Laboratory Mitsubishi Electric Corporation

• Yoneda M

  Api Corp. Ltd. Gifu Jpn

関連論文

• Developments of plasma etching technology for fabricating semiconductor devices
• SiO_2 Etching Characteristics with Low-Energy Ions Generated by Electron Cyclotron Resonance Plasma Using CF_4 and NF_3 Gases
• High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient : Etching
• High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient
• Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma : Etching and Deposition Technology
• ECR Plasma Etching with Heavy Halogen Ions : Etching and Deposition Technology
• Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma
• ECR Plasma Etching with Heavy Halogen Ions
• Effect of Electron Shading on Gate Oxide Degradation
• Reduction of Charge Build-Up with Pulse-Modulated Bias in Pulsed Electron Cyclotron Resonance Plasma
• Influence of Puled Electron Cyclotron Resonance Plasma on Gate Electrode Etching
• Reduction of Charge Build-up with High-Power Pulsed Electron Cyclotron Resonance Plasma
• Evaluation of Electron Shading Charge Buildup Damage Using Metal-Nitride-Oxide-Silicon Capacitors
• Etching Characteristics of WSi_2 with Pulsed-Electron Cyclotron Resonance Plasma
• Precise Evaluation of Pattern Distortion with Variation of the Impurity Concentration and Conductivity of Silicon Films
• SiO_2 Etching in C_4F_8/O_2 Electron Cyclotron Resonance Plasma
• Analysis of Fluorocarbon Deposition during SiO_2 Etching
• Pulsed Plasma Processing for Reduction of Profile Distortion Induced by Charge Buildup in Electron Cyclotron Resonance Plasma
• Profile Control of poly-Si Etching in Electron Cyclotron Resonance Plasma
• Mechanism of Reactive Ion Etching Lag in WSi_2 Etching Using Electron Cyclotron Resonance Plasma
• Effect Plasma Transport on Etched Profiles with Surface Topography in Diverging Field Electron Cyclotron Resonance Plasma
• Photolithography System Using Annular Illumination : Photolithography
• Photolithography System Using Annular Illumination
• Transformation of Dense Contact Holes during SiO_2 Etching
• Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching
• Electron Beam Direct Writing Technologies for 0.3-μm ULSI Devices : Lithography Technology
• Electron Beam Direct Writing Technologies for 0.3-μm ULSI Devices
• Low-Temperature Reactive Ion Etching for Multi-Layer Resist (Special Issue on Sub-Half Micron Si Device and Process Technologies)
• Mechanism for AlSiCu Alloy Corrosion
• Crystal Growth and Magnetic Properties of SmFe_2
• Magnetic Anisotropy of New Intermetallic Compound SmFe_7
• Magnetic Properties of SmFe_3 Single Crystal
• Mechanism of AlCu Film Corrosion
• Profile Distortion Caused by Local Electric Field in Polysilicon Etching
• Influence of Poly-Si Potential on Profile Distortion Caused by Charge Accumulation
• Effect of Electric Field on Electron Cyclotron Resonance Plasma Etching
• Highty Selective Contact Hole Etching Using Electron Cyclotron Resonance Plasma
• Electron Scattering from Si Surface and Interface by Cross-Sectional Transmission Electron Microscopy
• Very-Low-Temperature Preparation of Poly-Si Films by Plasma Chemical Vapor Deposition Using SiF_4/SiH_4/H_2 Gases
• Plasma Etching of ITO Thin Films Using a CH_4/H_2 Gas Mixture

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