Electron Beam Direct Writing Technologies for 0.3-μm ULSI Devices

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1990-11-20

著者

• Takeuchi Seiji

  Hitachi Research Laboratory Of Hitachi Lid.

• YONEDA Masahiro

  LSI Research and Development Labotary, Mitsubishi Electric Corporation

• Aoyama S

  Lsi R&d Laboratory Mitsubisi Electric Corporation

• Aoyama Satoshi

  Lsi R&d Lab Mitsunishi Electric Corporation

• Takeuchi Susumu

  Lsi R&d Laboratory Mitsubisi Electric Corporation

• Takeuchi S

  Department Of Materials Science And Technology Science University Of Tokyo

• MORIIZUMI Koichi

  LSI R&D Laboratory, Mitsubisi Electric Corporation

• FUJINO Takeshi

  LSI R&D Laboratory, Mitsubisi Electric Corporation

• MORIMOTO Hiroaki

  LSI R&D Laboratory, Mitsubisi Electric Corporation

• WATAKABE Yaichiro

  LSI R&D Laboratory, Mitsubisi Electric Corporation

• Fujino Takeshi

  Wood Research Institute, Kyoto University

• Fujino T

  Information Technology R&d Center Mitsubishi Electric Corporation:communication Systems R&d

• Fujino T

  Wood Research Institute Kyoto University

• Fujino Takeshi

  Department Of Electric And Electronic Engineering Ritsumeikan University

• Moriizumi K

  Mitsubishi Electric Corp. Hyogo Jpn

• Watakabe Y

  Mitsubishi Electric Corp. Itami

• Morimoto H

  Semiconductor Leading Edge Technologies Inc.

• Watakabe Yaichiro

  Lsi R & D Laboratory Mitsubishi Electric Corporation

• Yoneda M

  Api Corp. Ltd. Gifu Jpn

• Yoneda Masahiro

  Lsi R&d Laboratory Mitsubishi Electric Corporation

• Takeuchi Shin

  Institute For Solid State Physics University Of Tokyo

• MORIIZUMI Koichi

  LSI R&D Laboratory, Mitsubishi Electric Corporation

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