SiO_2 Etching Characteristics with Low-Energy Ions Generated by Electron Cyclotron Resonance Plasma Using CF_4 and NF_3 Gases
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-06-30
著者
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FUJIWARA Nobuo
LSI Laboratory, Mitsubishi Electric Corporation
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MIYATAKE Hiroshi
LSI Laboratory, Mitsubishi Electric Corporation
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YONEDA Masahiro
LSI Laboratory, Mitsubishi Electric Corporation
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NAKAMOTO Kazuo
LSI Laboratory, Mitsubishi Electric Corporation
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ABE Haruhiko
LSI Laboratory, Mitsubishi Electric Corporation
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Nakamoto Kazuo
Lsi Laboratory Mitsubishi Electric Corporation
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YONEDA Masahiro
ULSI Laboratory, Mitsubishi Electric Corporation
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Fujiwara N
Ulsi Development Center Mitsubishi Electric Corporation
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Miyatake Hiroshi
Ulsi Development Center Mitsubishi Electric Corporation
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Nishioka K
Mitsubishi Electric Corp. Hyogo Jpn
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Abe Haruhiko
Lsi Laboratory Mitsubishi Electric Corporation
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Yoneda M
Api Corp. Ltd. Gifu Jpn
関連論文
- Developments of plasma etching technology for fabricating semiconductor devices
- SiO_2 Etching Characteristics with Low-Energy Ions Generated by Electron Cyclotron Resonance Plasma Using CF_4 and NF_3 Gases
- High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient : Etching
- High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient
- Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma : Etching and Deposition Technology
- ECR Plasma Etching with Heavy Halogen Ions : Etching and Deposition Technology
- Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma
- ECR Plasma Etching with Heavy Halogen Ions
- Effect of Electron Shading on Gate Oxide Degradation
- Reduction of Charge Build-Up with Pulse-Modulated Bias in Pulsed Electron Cyclotron Resonance Plasma
- Influence of Puled Electron Cyclotron Resonance Plasma on Gate Electrode Etching
- Reduction of Charge Build-up with High-Power Pulsed Electron Cyclotron Resonance Plasma
- Evaluation of Electron Shading Charge Buildup Damage Using Metal-Nitride-Oxide-Silicon Capacitors
- Etching Characteristics of WSi_2 with Pulsed-Electron Cyclotron Resonance Plasma
- Precise Evaluation of Pattern Distortion with Variation of the Impurity Concentration and Conductivity of Silicon Films
- SiO_2 Etching in C_4F_8/O_2 Electron Cyclotron Resonance Plasma
- Analysis of Fluorocarbon Deposition during SiO_2 Etching
- Pulsed Plasma Processing for Reduction of Profile Distortion Induced by Charge Buildup in Electron Cyclotron Resonance Plasma
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- Mechanism of Reactive Ion Etching Lag in WSi_2 Etching Using Electron Cyclotron Resonance Plasma
- Effect Plasma Transport on Etched Profiles with Surface Topography in Diverging Field Electron Cyclotron Resonance Plasma
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- Electron Scattering from Si Surface and Interface by Cross-Sectional Transmission Electron Microscopy
- Transformation of Dense Contact Holes during SiO2 Etching
- Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching
- Effect of Electron Shading on Gate Oxide Degradation
- Reduction of Charge Build-Up with Pulse-Modulated Bias in Pulsed Electron Cyclotron Resonance Plasma