ABE Haruhiko | LSI Laboratory, Mitsubishi Electric Corporation

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著作論文

SiO_2 Etching Characteristics with Low-Energy Ions Generated by Electron Cyclotron Resonance Plasma Using CF_4 and NF_3 Gases
High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient : Etching
High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient
Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma : Etching and Deposition Technology
ECR Plasma Etching with Heavy Halogen Ions : Etching and Deposition Technology
Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma
ECR Plasma Etching with Heavy Halogen Ions

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