Yoneda M | Api Corp. Ltd. Gifu Jpn

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著作論文

SiO_2 Etching Characteristics with Low-Energy Ions Generated by Electron Cyclotron Resonance Plasma Using CF_4 and NF_3 Gases
High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient : Etching
High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient
Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma : Etching and Deposition Technology
ECR Plasma Etching with Heavy Halogen Ions : Etching and Deposition Technology
Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma
ECR Plasma Etching with Heavy Halogen Ions
Reduction of Charge Build-up with High-Power Pulsed Electron Cyclotron Resonance Plasma
Evaluation of Electron Shading Charge Buildup Damage Using Metal-Nitride-Oxide-Silicon Capacitors
Etching Characteristics of WSi_2 with Pulsed-Electron Cyclotron Resonance Plasma
Precise Evaluation of Pattern Distortion with Variation of the Impurity Concentration and Conductivity of Silicon Films
SiO_2 Etching in C_4F_8/O_2 Electron Cyclotron Resonance Plasma
Analysis of Fluorocarbon Deposition during SiO_2 Etching
Pulsed Plasma Processing for Reduction of Profile Distortion Induced by Charge Buildup in Electron Cyclotron Resonance Plasma
Profile Control of poly-Si Etching in Electron Cyclotron Resonance Plasma
Mechanism of Reactive Ion Etching Lag in WSi_2 Etching Using Electron Cyclotron Resonance Plasma
Effect Plasma Transport on Etched Profiles with Surface Topography in Diverging Field Electron Cyclotron Resonance Plasma
Electron Beam Direct Writing Technologies for 0.3-μm ULSI Devices : Lithography Technology
Electron Beam Direct Writing Technologies for 0.3-μm ULSI Devices
Low-Temperature Reactive Ion Etching for Multi-Layer Resist (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Mechanism for AlSiCu Alloy Corrosion
Mechanism of AlCu Film Corrosion
Profile Distortion Caused by Local Electric Field in Polysilicon Etching
Influence of Poly-Si Potential on Profile Distortion Caused by Charge Accumulation

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