Fujiwara N | Ulsi Development Center Mitsubishi Electric Corporation
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概要
関連著者
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Fujiwara N
Ulsi Development Center Mitsubishi Electric Corporation
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Yoneda M
Api Corp. Ltd. Gifu Jpn
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YONEDA Masahiro
ULSI Laboratory, Mitsubishi Electric Corporation
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Fujiwara Nobuo
Ulsi Laboratory Mitsubishi Electric Corporation
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Maruyama T
Meijo Univ. Nagoya Jpn
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Fujiwara Nobuo
ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
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MARUYAMA Takahiro
ULSI Laboratory, Mitsubishi Electric Corporation
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Yoneda Masahiro
Ulsi Laboratory Mitsubishi Electric Corporation
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Maruyama T
Tokyo Inst. Technol. Yokohama Jpn
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Maruyama T
Faculty Of Engineering Niigata University
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Maruyama T
Department Of Photonics Ritsumeikan University
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MIYATAKE Hiroshi
ULSI Laboratory, Mitsubishi Electric Corporation
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Nakamoto Kazuo
Lsi Laboratory Mitsubishi Electric Corporation
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Maruyama Takeo
Faculty Of Engineering Niigata University
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Nishioka K
Mitsubishi Electric Corp. Hyogo Jpn
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ABE Haruhiko
LSI Laboratory, Mitsubishi Electric Corporation
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Abe Haruhiko
Lsi Laboratory Mitsubishi Electric Corporation
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Sawai H
Lsi Laboratory Mitsubishi Electric Corporation
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OGINO Satoshi
ULSI Laboratory, Mitsubishi Electric Corporation
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Miyatake Hiroshi
Ulsi Development Center Mitsubishi Electric Corporation
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OGINO Satoshi
Food/Brewing section, Yamanashi Inrustrial Technology Center
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Ogino Satoshi
Ulsi Laboratory Mitsubishi Electric Corporation
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FUJIWARA Nobuo
LSI Laboratory, Mitsubishi Electric Corporation
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YONEDA Masahiro
LSI Laboratory, Mitsubishi Electric Corporation
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NAKAMOTO Kazuo
LSI Laboratory, Mitsubishi Electric Corporation
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YONEDA Masahiro
LSI Research and Development Labotary, Mitsubishi Electric Corporation
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SAWAI Hisaharu
LSI Research and Development Labotary, Mitsubishi Electric Corporation
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FUJIWARA Nobuo
LSI Research and Development Labotary, Mitsubishi Electric Corporation
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NISHIOKA Kyusaku
LSI Research and Development Labotary, Mitsubishi Electric Corporation
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ABE Haruhiko
LSI Research and Development Labotary, Mitsubishi Electric Corporation
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Fujiwara Nobuo
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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SAKAMORI Shigenori
ULSI Laboratory, Mitsubishi Electric Corporation
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Nishioka Kyusaku
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Abe Haruhiko
Lsi R&d Lab. Mitsubishi Electric Corp.
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Yoneda Masahiro
Lsi R&d Laboratory Mitsubishi Electric Corporation
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HORIE Kazuo
Kitaitami Works, Mitsubishi Electric Corporation
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Horie K
Univ. Tokyo Tokyo Jpn
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Horie Kazuo
Kitaitami Works Mitsubishi Electric Corporation
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SAMATA Hiroaki
College of Science and Engineering, Aoyama Gakuin University
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FUJIWARA Nobuto
College of Science and Engineering, Aoyama Gakuin University
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NAGATA Yujiro
College of Science and Engineering, Aoyama Gakuin University
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UCHIDA Takayuki
Tokyo Institute of Polytechnics
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LAN Ming
Department of Physics, National Chung Hsing University
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SIOZAWA Ken-itiro
ULSI Laboratory, Mitsubishi Electric Corp.
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Lan Ming
Department Of Physics National Chung Hsing University
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Nagata Y
College Of Science And Engineering Aoyama Gakuin University
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Nagata Yujiro
College Of Science & Engineering Aoyama Gakuin University
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Samata Hiroaki
College Of Science And Engineering Aoyama Gakuin University
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Uchida T
Tokyo Polytechnic University
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Siozawa Ken-itiro
Ulsi Laboratory Mitsubishi Electric Corp.
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SAWAI Hisaharu
LSI Laboratory, Mitsubishi Electric Corporation
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NISHIOKA Kyusaku
Kitaitami Works, Mitsubishi Electric Corporation
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TSUKAMOTO Katsuhiro
Kitaitami Works, Mitsubishi Electric Corporation
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BANJO Toshinobu
Kitaitami Works, Mitsubishi Electric Corporation
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Tsukamoto K
Univ. Tokyo Tokyo Jpn
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Nishioka Kyusaku
Kitaitami Works Mitsubishi Electric Corporation
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Sawai Hisaharu
Lsi Laboratory Mitsubishi Electric Corporation
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Tsukamoto K
Ulsi Laboratory Mitsubishi Electric Corporation
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Banjo T
Mitsubishi Electric Corp. Hyogo Jpn
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Ishida Toru
Materials And Components Research Laboratory Matsushita Electric Industrial Co. Ltd.
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MIYATAKE Hiroshi
LSI Laboratory, Mitsubishi Electric Corporation
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SIOZAWA Kein-itiro
ULSI Laboratory, Mitsubishi Electric Corporation
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TABARU Kenji
ULSI Laboratory, Mitsubishi Electric Corporation
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MARUYAMA Takahiro
ULSl Laboratory, Mitsubishi Electric Corporation
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FUJIWARA Nobuo
ULSl Laboratory, Mitsubishi Electric Corporation
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SIOZAWA Ken-itiro
ULSl Laboratory, Mitsubishi Electric Corporation
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YONEDA Masahiro
ULSl Laboratory, Mitsubishi Electric Corporation
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OIKAWA Kota
ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd.
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YAMANAKA Michinari
ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd.
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SASAKI Tomoyuki
ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd.
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YONEKURA Kazumasa
ULSI Laboratory, Mitsubishi Electric Corporation
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KIRITANI Masahide
ULSI Laboratory, Mitsubishi Electric Corporation
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YOKOI Takahiro
ULSI Laboratory, Mitsubishi Electric Corporation
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Ishikawa Tsutomu
Fujitsu Laboratories Lid.
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Shimizu Yoshihiro
College Of Science And Engineering Aoyama Gakuin University
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Ishida T
Osaka Prefecture Univ. Sakai‐shi Jpn
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Ishida Tomoaki
LSI Laboratory, Mitsubishi Electric Corporation
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HARADA Hiroshi
CRT Business Division, Mitsubishi Electric Corporation
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Ishikawa T
Microwave Device Development Department Mitsubishi Electric Corporation
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Tabaru Kenji
Ulsi Laboratory Mitsubishi Electric Corporation
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Sakamori Shigenori
Ulsi Development Center Mitsubishi Electric Corporation
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Harada Hiroshi
Crt Business Division Mitsubishi Electric Corporation
著作論文
- Developments of plasma etching technology for fabricating semiconductor devices
- SiO_2 Etching Characteristics with Low-Energy Ions Generated by Electron Cyclotron Resonance Plasma Using CF_4 and NF_3 Gases
- High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient : Etching
- High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient
- Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma : Etching and Deposition Technology
- ECR Plasma Etching with Heavy Halogen Ions : Etching and Deposition Technology
- Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma
- ECR Plasma Etching with Heavy Halogen Ions
- Effect of Electron Shading on Gate Oxide Degradation
- Reduction of Charge Build-Up with Pulse-Modulated Bias in Pulsed Electron Cyclotron Resonance Plasma
- Influence of Puled Electron Cyclotron Resonance Plasma on Gate Electrode Etching
- Reduction of Charge Build-up with High-Power Pulsed Electron Cyclotron Resonance Plasma
- Evaluation of Electron Shading Charge Buildup Damage Using Metal-Nitride-Oxide-Silicon Capacitors
- Etching Characteristics of WSi_2 with Pulsed-Electron Cyclotron Resonance Plasma
- Precise Evaluation of Pattern Distortion with Variation of the Impurity Concentration and Conductivity of Silicon Films
- SiO_2 Etching in C_4F_8/O_2 Electron Cyclotron Resonance Plasma
- Analysis of Fluorocarbon Deposition during SiO_2 Etching
- Pulsed Plasma Processing for Reduction of Profile Distortion Induced by Charge Buildup in Electron Cyclotron Resonance Plasma
- Profile Control of poly-Si Etching in Electron Cyclotron Resonance Plasma
- Mechanism of Reactive Ion Etching Lag in WSi_2 Etching Using Electron Cyclotron Resonance Plasma
- Effect Plasma Transport on Etched Profiles with Surface Topography in Diverging Field Electron Cyclotron Resonance Plasma
- Transformation of Dense Contact Holes during SiO_2 Etching
- Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching
- Mechanism for AlSiCu Alloy Corrosion
- Crystal Growth and Magnetic Properties of SmFe_2
- Magnetic Anisotropy of New Intermetallic Compound SmFe_7
- Magnetic Properties of SmFe_3 Single Crystal
- Mechanism of AlCu Film Corrosion
- Profile Distortion Caused by Local Electric Field in Polysilicon Etching
- Influence of Poly-Si Potential on Profile Distortion Caused by Charge Accumulation