Evaluation of Electron Shading Charge Buildup Damage Using Metal-Nitride-Oxide-Silicon Capacitors

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-04-30

著者

• Fujiwara Nobuo

  Ulsi Laboratory Mitsubishi Electric Corporation

• Maruyama T

  Tokyo Inst. Technol. Yokohama Jpn

• Maruyama T

  Faculty Of Engineering Niigata University

• Maruyama T

  Meijo Univ. Nagoya Jpn

• Maruyama T

  Department Of Photonics Ritsumeikan University

• SAKAMORI Shigenori

  ULSI Laboratory, Mitsubishi Electric Corporation

• MARUYAMA Takahiro

  ULSI Laboratory, Mitsubishi Electric Corporation

• MIYATAKE Hiroshi

  ULSI Laboratory, Mitsubishi Electric Corporation

• YONEDA Masahiro

  ULSI Laboratory, Mitsubishi Electric Corporation

• Fujiwara N

  Ulsi Development Center Mitsubishi Electric Corporation

• Maruyama Takeo

  Faculty Of Engineering Niigata University

• Miyatake Hiroshi

  Ulsi Development Center Mitsubishi Electric Corporation

• Sakamori Shigenori

  Ulsi Development Center Mitsubishi Electric Corporation

• Yoneda M

  Api Corp. Ltd. Gifu Jpn

• Yoneda Masahiro

  Ulsi Laboratory Mitsubishi Electric Corporation

• Fujiwara Nobuo

  ULSI Development Center, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan

関連論文

• Epitaxial Growth of BeZnSe on CaF_2/Si(111) Substrate : Semiconductors
• Theoretical Analysis of The threshold Current Density in BeMgZnSe Quantum-Well UltraViolet Lasers : Optics and Quantum Electronics
• Developments of plasma etching technology for fabricating semiconductor devices
• SiO_2 Etching Characteristics with Low-Energy Ions Generated by Electron Cyclotron Resonance Plasma Using CF_4 and NF_3 Gases
• High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient : Etching
• High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient
• Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma : Etching and Deposition Technology
• ECR Plasma Etching with Heavy Halogen Ions : Etching and Deposition Technology
• Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma
• ECR Plasma Etching with Heavy Halogen Ions
• Nitrogen Doping into Cu_2O Thin Films Deposited by Reactive Radio-Frequency Magnetron Sputtering
• Nitrogen Doping into Cu_2O Thin Films Deposited by Reactive Sputtering Method
• Thin-Film Deposition of Cu_2O by Reactive Radio-Frequency Magnetron Sputtering
• Effect of Electron Shading on Gate Oxide Degradation
• Reduction of Charge Build-Up with Pulse-Modulated Bias in Pulsed Electron Cyclotron Resonance Plasma
• Influence of Puled Electron Cyclotron Resonance Plasma on Gate Electrode Etching
• Reduction of Charge Build-up with High-Power Pulsed Electron Cyclotron Resonance Plasma
• Evaluation of Electron Shading Charge Buildup Damage Using Metal-Nitride-Oxide-Silicon Capacitors
• Etching Characteristics of WSi_2 with Pulsed-Electron Cyclotron Resonance Plasma
• Precise Evaluation of Pattern Distortion with Variation of the Impurity Concentration and Conductivity of Silicon Films
• SiO_2 Etching in C_4F_8/O_2 Electron Cyclotron Resonance Plasma
• Analysis of Fluorocarbon Deposition during SiO_2 Etching
• Pulsed Plasma Processing for Reduction of Profile Distortion Induced by Charge Buildup in Electron Cyclotron Resonance Plasma
• Profile Control of poly-Si Etching in Electron Cyclotron Resonance Plasma
• Mechanism of Reactive Ion Etching Lag in WSi_2 Etching Using Electron Cyclotron Resonance Plasma
• Effect Plasma Transport on Etched Profiles with Surface Topography in Diverging Field Electron Cyclotron Resonance Plasma
• Transformation of Dense Contact Holes during SiO_2 Etching
• Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching
• Electron Beam Direct Writing Technologies for 0.3-μm ULSI Devices : Lithography Technology
• Electron Beam Direct Writing Technologies for 0.3-μm ULSI Devices
• Low-Temperature Reactive Ion Etching for Multi-Layer Resist (Special Issue on Sub-Half Micron Si Device and Process Technologies)
• Mechanism for AlSiCu Alloy Corrosion
• Crystal Growth and Magnetic Properties of SmFe_2
• Magnetic Anisotropy of New Intermetallic Compound SmFe_7
• Magnetic Properties of SmFe_3 Single Crystal
• Mechanism of AlCu Film Corrosion
• Profile Distortion Caused by Local Electric Field in Polysilicon Etching
• Influence of Poly-Si Potential on Profile Distortion Caused by Charge Accumulation
• Comparative study of cataclastic rocks from a drill core and outcrops of the Nojima Fault zone on Awaji Island, Japan
• Silicorn Dioxide Thin Films Prepared from Silicon Tetraacetate Using ArF Excimer Laser by Chemical Vapor Deposition
• Electrical Characterization of Silicon Dioxide Thin Film Prepared by ArF Excimer Laser Chemical Vapor Deposition frorn Silicon Tetraacetate
• New Frequency Stabilization Method of a Semiconductor Laser Using the Faraday Effect of the Rb-D_2 Absorption Line
• Frequency Stabilizatiorn of a Semiconductor Laser under Direct Frequency Shift Keying Using the Saturated Absorption Signal
• Improvement of the Visible Electroluminescence from Nanocrystalline Silicon Embedded in CaF_2 on Si(111)Substrate Prepared by Rapid Thermal Annealing
• Visible Electroluminescence from Silicon Nanocrystals Embedded in CaF_2 Epilayers on Si(111) with Rapid Thermal Anneal
• Visible Electroluminescence from Nanocrystalline Silicon Embedded in Single-Crystalline CaF_2/Si(111) with Rapid Thermal Anneal
• Effect of Electric Field on Electron Cyclotron Resonance Plasma Etching
• Excimer-Type Electroluminescence and Carrier-Transporting Properties of Electron-Accepting π-Conjugated Polymers
• Intermolecular π-π Interraction of Poly (4, 4'-dialkyl -2, 2'-bithiazole - 5, 5'-diyl) s and Photoluminescence of the Polymers
• Fabrication of Storage Capacitance-Enhanced Capacitors with a Rough Electrode
• Highty Selective Contact Hole Etching Using Electron Cyclotron Resonance Plasma
• Electron Scattering from Si Surface and Interface by Cross-Sectional Transmission Electron Microscopy
• Electroluminescence of Nanocrystal Si Embedded in Single-Crystal CaF_2/Si(111)
• Effect of N_2 Addition on Aluminum Alloy Etching by Electron Cyclotron Resonance Reactive Ion Etching and Magnetically Enhanced Reactive Ion Etching
• Mechanism of Reactive Ion Etching Lag for Aluminum Alloy Etching
• Analysis for Superposed-Laser Electron Acceleration: Scaling Law, Beam Quality and Diffraction Effect of Laser
• Cortical Potentials Related to the Recognition of Mandibular Position and Voluntary Mandibular Movements as Revealed by Magnetoencephalography(Abstracts of Workshop in the ORAL HEALTH SCIENCE CENTER)
• Transformation of Dense Contact Holes during SiO2 Etching
• Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching
• Effect of Electron Shading on Gate Oxide Degradation
• Reduction of Charge Build-Up with Pulse-Modulated Bias in Pulsed Electron Cyclotron Resonance Plasma

もっと見る 閉じる

スポンサーリンク