Fabrication of Storage Capacitance-Enhanced Capacitors with a Rough Electrode

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1990-12-20

著者

• ABE Haruhiko

  LSI Research and Development Labotary, Mitsubishi Electric Corporation

• Higaki Takashi

  Lsi R&d Lab. Mitsubishi Electric Corp

• MIYATAKE Hiroshi

  LSI Research and Development Laboratory, Mitsubishi Electric Corporation

• Miyatake Hiroshi

  Ulsi Development Center Mitsubishi Electric Corporation

• Miyatake Hiroshi

  Lsi R&d Lab. Mitsubishi Electric Corp.

• Abe Haruhiko

  Lsi R&d Lab. Mitsubishi Electric Corp.

• Hayashide Yoshio

  Lsi R&d Lab. Mitsubishi Electric Corp

• HIRAYAMA Makoto

  LSI Research and Development Laboratory, Mitsubishi Electric Corporation

• MITSUHASHI Junichi

  LSI R&D Lab. Mitsubishi Electric Corp

• Hirayama Makoto

  Lsi R & D Lab. Mitsubishi Electric Co.

• Hirayama Makoto

  Lsi R&d Lab. Mitsubishi Electric Corp.

• Mitsuhashi Junichi

  Lsi R&d Lab. Mitsubishi Electric Corp

関連論文

• SiO_2 Etching Characteristics with Low-Energy Ions Generated by Electron Cyclotron Resonance Plasma Using CF_4 and NF_3 Gases
• Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma : Etching and Deposition Technology
• ECR Plasma Etching with Heavy Halogen Ions : Etching and Deposition Technology
• Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma
• ECR Plasma Etching with Heavy Halogen Ions
• Influence of Puled Electron Cyclotron Resonance Plasma on Gate Electrode Etching
• Evaluation of Electron Shading Charge Buildup Damage Using Metal-Nitride-Oxide-Silicon Capacitors
• Highly Reliable SiO_2 Films Formed by UV-O_2 Oxidation
• Highly Reliable SiO_2 Films Formed by UV-O_2 Oxidation
• Effects of Oxygen Concentration and Annealing Sequence on Microstructure of Separation by Implanted Oxygen Wafer with High-Temperature Annealing
• High-Quality CVD/Thermal Stacked Gate Oxide Films with Hydrogen-Free CVD SiO_2 Formed in a SiCl_4-N_2O System
• Kinetic Study of Silicon Nitride Growth from Dichlorosilane and Ammonia
• Mechanism of AlCu Film Corrosion
• Profile Distortion Caused by Local Electric Field in Polysilicon Etching
• Influence of Poly-Si Potential on Profile Distortion Caused by Charge Accumulation
• Optical Absorption in Silicon Oxide Film Near the SiO_2/Si Interface
• Optical Absorption in Ultrathin Silicon Oxide Film (SOLID STATE DEVICES AND MATERIALS 1)
• Fabrication of Storage Capacitance-Enhanced Capacitors with a Rough Electrode
• Highty Selective Contact Hole Etching Using Electron Cyclotron Resonance Plasma
• Film Characteristics of APCVD Oxide Using Organic Silicon and Ozone
• Refractive Index Distribution in Photoresist Thin Film Formed by the Spin Coating Method
• Adhesion Improvement of Photoresist on TiN/Al Multilayer by Ozone Treatment
• Electron Scattering from Si Surface and Interface by Cross-Sectional Transmission Electron Microscopy
• Time Dependent Dielectric Breakdown of Thin SiO_2 Films
• The Effect of Gate Bias on Hot Electron Trapping
• Physiologically-Based Speech Synthesis Using Neural Networks (Special Section on Speech Synthesis: Current Technologies and Equipment)
• Transformation of Dense Contact Holes during SiO2 Etching
• Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching
• Effect of Electron Shading on Gate Oxide Degradation
• Reduction of Charge Build-Up with Pulse-Modulated Bias in Pulsed Electron Cyclotron Resonance Plasma

もっと見る 閉じる

スポンサーリンク