Film Characteristics of APCVD Oxide Using Organic Silicon and Ozone

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概要

• 論文の詳細を見る

• Film characteristics of APCVD oxide using octamethylcyclo tetrasiloxane (OMCTS) and O_3 (AP-OMCTS oxide) have been investigated minutely for applications to advanced VLSI devices. Deposition characteristics of AP-OMCTS oxide strongly depend on deposition temperature and high quality films can be formed by increasing the deposition temperature. The step coverage shows a most smooth "flowing profile" around at 425℃. The dependence of the deposition characteristics on O_3 concentration can not be observed in contrast with the deposition characteristics of AP-TEOS oxide which evidently depend on the O_3 concentration. From these results, it is supposed that CVD reactions based on OMCTS-O_3 chemistry consist of the precursor production correspond to CH_3 elimination reaction with O radicals and the subsequent polymerization (dehydration) caused by thermal energy provided from hot substrate.

• 社団法人応用物理学会の論文
• 1991-07-15

著者

• ABE Haruhiko

  LSI Research and Development Labotary, Mitsubishi Electric Corporation

• Abe Haruhiko

  Lsi R&d Lab. Mitsubishi Electric Corp.

• Abe Haruhiko

  Lsi Research And Development Laboratory Mitsubishi Electric Corporation

• Hayashide Y

  Lsi Research And Development Laboratory Mitsubishi Electric Corporation

• Hayashide Yoshio

  Lsi R&d Lab. Mitsubishi Electric Corp

• Matsuura M

  Optical Disk Drive Laboratory Fujitsu Laboratories Limited

• Kotani H

  Lsi Research And Development Laboratory Mitsubishi Electric Corporation

• MATSUURA Masazumi

  LSI Research and Development Laboratory, Mitsubishi Electric Corporation

• KOTANI Hideo

  LSI Research and Development Laboratory, Mitsubishi Electric Corporation

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• Film Characteristics of APCVD Oxide Using Organic Silicon and Ozone

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