The Effect of Gate Bias on Hot Electron Trapping

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概要

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• The effect of the gate bias of MOSFET on hot electron trapping under long-term stress is described. Threshold voltage shift caused by hot electron trapping increases with decreasing gate bias. The hot electron trapping is strongly affected by the electric field in the gate oxide, and it is considered that the trapping efficiency increases with increasing repulsive electric field in the gate oxide.

• 社団法人応用物理学会の論文
• 1980-10-05

著者

• HIRAYAMA Makoto

  Mitsubishi Electric Corporation, ULSI Laboratory

• Nagasawa Koichi

  Lsi R & D Lab. Mitsubishi Electric Co.

• MATSUMOTO Heihachi

  Mitsubishi Electric Corporation

• Sawada Kokichi

  Mitsubishi Electric Co. Kitaitami Works

• Hirayama Makoto

  Lsi R & D Lab. Mitsubishi Electric Co.

• ASAI Sotoju

  Mitsubishi Electric Corporation

• NAGASAWA Koichi

  Mitsubishi Electric Corporation

• Matsumoto Heihachi

  Mitsubishi Electric Co. Kitaitami Works

• Asai Sotoju

  Lsi R & D Lab. Mitsubishi Electric Co.

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• The Effect of Temperature on Hot Electron Trapping in MOSFET's
• Optical Absorption in Silicon Oxide Film Near the SiO_2/Si Interface
• Optical Absorption in Ultrathin Silicon Oxide Film (SOLID STATE DEVICES AND MATERIALS 1)
• Fabrication of Storage Capacitance-Enhanced Capacitors with a Rough Electrode
• Time Dependent Dielectric Breakdown of Thin SiO_2 Films
• The Effect of Gate Bias on Hot Electron Trapping
• A New Breakdown Phenomenon in Fine Structured VLSI Circuits

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