Time Dependent Dielectric Breakdown of Thin SiO_2 Films

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概要

• 論文の詳細を見る

• Time dependent dielectric breakdowns (TDDB) of thin SiO_2 films are described. The breakdowns are composed of two logarithmic normal distributions having different mean time to breakdown. One is area dependent and the other is independent. With increasing the area of capacitors the distribution of dielectric breakdowns shifts toward only one logarithmic normal distribution dominated by the area dependent breakdown having the shorter mean time to breakdown. The results are compared with usual voltage ramping method. In addition, electric field acceleration factor is measured 10^<2.7>/MV/cm for the area dependent mode and 10^5/MV/cm for area independent mode. The thickness dependence is also described.

• 社団法人応用物理学会の論文
• 1981-05-05

著者

• Nagasawa Koichi

  Lsi R & D Lab. Mitsubishi Electric Co.

• MATSUMOTO Heihachi

  Mitsubishi Electric Corporation

• Sawada Kokichi

  Mitsubishi Electric Co. Kitaitami Works

• Hirayama Makoto

  Lsi R & D Lab. Mitsubishi Electric Co.

• ASAI Sotoju

  LSI R & D Lab. Mitsubishi Electric Co.

• Matsumoto Heihachi

  Mitsubishi Electric Co. Kitaitami Works

• Asai Sotoju

  Lsi R & D Lab. Mitsubishi Electric Co.

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