X-Ray Lithography Using Chlorinated Polymethylstyrene (CPMS) as a Negative X-Ray Resist
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-01-20
著者
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Eimori Takahisa
Lsi R & D Laboratory Mitsubishi Electric Corporation
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WATAKABE Yaichiro
LSI R&D Laboratory, Mitsubisi Electric Corporation
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YOSHIOKA Nobuyuki
LSI R&D Lab, Mitsunishi Electric Corporation
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Suzuki Yoshiki
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
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Suzuki Yoshiki
Lsi R & D Laboratory Mitsubishi Electric Corporation
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YAMAZAKI Teruhiko
LSI R&D Laboratory, Mitsubishi Electric Corporation,
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ISHIO Noriaki
LSI R & D Laboratory, Mitsubishi Electric Corporation
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Ishio Noriaki
Lsi R & D Laboratory Mitsubishi Electric Corporation
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Watakabe Yaichiro
Lsi R & D Laboratory Mitsubishi Electric Corporation
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Yamazaki Teruhiko
Lsi R & D Laboratory Mitsubishi Electric Corporation
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Yoshioka Nobuyuki
Lsi R & D Laboratory Mitsubishi Electric Corporation
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- A High-Capacitance Trench Structure (Hi-CAT) for Megabit LSI Memories
- Gas Plasma Etching of Chromium Films
- X-Ray Lithography Using Chlorinated Polymethylstyrene (CPMS) as a Negative X-Ray Resist
- Hot Electron Improvement in MOS RAM's Based on Epitaxial Substrate
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