Hot Electron Improvement in MOS RAM's Based on Epitaxial Substrate

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概要

• 論文の詳細を見る

• The access time shift (?T_<acc>) through long-term stress has been measured in actual 64-kbit dynamic MOS RAM's fabricated on several types of P/P^+ epitaxial substrates. The impurity concentration under the drain was found to affect the ?T_<acc> due to hot electron trapping in the gate oxide film. The thicker epitaxial layer with higher resistivity shows an advantage for hot electron improvement in future dynamic MOS RAM's.

• 社団法人応用物理学会の論文
• 1985-03-20

著者

• Eimori Takahisa

  Lsi R & D Laboratory Mitsubishi Electric Corporation

• Matsumoto Heihachi

  Lsi R & D Laboratory Mitsubishi Electric Corporation

• Satoh Shin-ichi

  Lsi R & D Laboratory Mitsubishi Electric Corporation

関連論文

• A High-Capacitance Trench Structure (Hi-CAT) for Megabit LSI Memories
• X-Ray Lithography Using Chlorinated Polymethylstyrene (CPMS) as a Negative X-Ray Resist
• Hot-Electron Trapping Effects of Short Channel 64 K Dynamic MOS RAM : A-2: LSI-1
• Hot Electron Improvement in MOS RAM's Based on Epitaxial Substrate

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