An All Dry Mask Making Process by Gas Plasma

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概要

• 論文の詳細を見る

• An all dry mask making process is demonstrated in which gas plasmas are used. A photoresist film was exposed to an electron beam with dose range of 2.5×10^<-4> C/cm^2 to 5×10^<-4> C/cm, and the resist film was dry developed using a wet air gas plasma. Dry developed resist patterns were obtained with good edge quality. The dry developed patterns were very thin films. A chromium photomask film was successfully etched using a mixed gas plasma of CCl_4 and air. From the data obtained by an FT-IR analysis, it is speculated that the phenolic hydroxy group which has a high resistivity to the gas plasma environment was formed in the resist film by electron beam radiation.

• 社団法人応用物理学会の論文
• 1981-11-05

著者

• Nakata Hidefumi

  Lsi Research And Development Laboratory Mitsubishi Electric Corporation

• Yamazaki Teruhiko

  Lsi R & D Laboratory Mitsubishi Electric Corporation

• TANAKA Kazuhiro

  LSI Research and Development Laboratory, Mitsubishi Electric Corporation

• Tanaka Kazuhiro

  Lsi Research And Development Laboratory Mitsubishi Electric Corporation

関連論文

• The Role of a Photoresist Film on Reverse Gas Plasma Etching of Chromium Films
• A High-Capacitance Trench Structure (Hi-CAT) for Megabit LSI Memories
• Gas Plasma Etching of Chromium Films
• X-Ray Lithography Using Chlorinated Polymethylstyrene (CPMS) as a Negative X-Ray Resist
• An All Dry Mask Making Process by Reverse Gas Plasma Etching
• An All Dry Mask Making Process by Gas Plasma

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