Reactive Ion Beam Etching Using a Selective Gallium Doping Method

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概要

• 論文の詳細を見る

• A maskless process has been realized by combining reactive ion beam etching (RIBE) with focused ion beam (FIB) technology. Si patterns of 0.3 μm with no undercutting can be obtained using RIBE with electron cyclotron resonance (ECR) plasma. A Ga compound is formed as an in situ etching mask.

• 社団法人応用物理学会の論文
• 1989-09-20

著者

• NISHIOKA Kyusaku

  LSI Research and Development Labotary, Mitsubishi Electric Corporation

• MORIMOTO Hiroaki

  LSI R&D Laboratory, Mitsubisi Electric Corporation

• Nishioka Kyusaku

  Lsi Research And Development Laboratory Mitsubishi Electric Corporation

• Kato Tadao

  Lsi Research And Development Laboratory Mitsubishi Electric Corporation

• Mashiko Yoji

  Lsi Research And Development Laboratory Mitsubishi Electric Corporation

• NISHIOKA Kyusaku

  LSI Research and Development Laboratory, Mitsubishi Electric Corporation

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• Highly Selective AlSiCu Etching Using BBr_3 Mixed-Gas Plasma
• ECR Plasma Etching with Heavy Halogen Ions
• Electron Beam Direct Writing Technologies for 0.3-μm ULSI Devices : Lithography Technology
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• Characterization of Silicon Implanted with Focused Ion Beam by Raman Microprobe
• Cold and Low-Energy Ion Etching(COLLIE) : Etching and Deposition Technology
• Reactive Ion Beam Etching Using a Selective Gallium Doping Method
• Cold and Low-Energy Ion Etching (COLLIE)

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