Sub-0.10 μm Hole Fabrication Using Bilayer Silylation Process for 193 nm Lithography
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-12-30
著者
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ENDO Masamori
Department of Physics, School of Science, Tokai University
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Endo M
Department Of Physics School Of Science Tokai University
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MORIMOTO Hiroaki
Semiconductor Leading Edge Technologies, Inc.
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Satou I
Semiconductor Leading Edge Technol. Inc. Yokohama Jpn
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SATOU Isao
Semiconductor Leading Edge Technologies, Inc.
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ENDO Masataka
Semiconductor Leading Edge Technologies, Inc.
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KUHARA Kouichi
Semiconductor Leading Edge Technologies, Inc.
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Morimoto H
Semiconductor Leading Edge Technologies Inc.
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Kuhara Kouichi
Semiconductor Leading Edge Technologies Inc.
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